Flat-panel display embedded with a fingerprint sensor and a method of forming the same
a fingerprint sensor and flat-panel display technology, applied in the field of fingerprint sensors, can solve the problem of contradiction between the fingerprint button and the front surface of the mobile device, and achieve the effect of reducing the risk of accidental touching
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first embodiment
[0020]FIG. 1 shows a cross-sectional view of a liquid crystal display (LCD) 100 embedded with a fingerprint sensor, which is integrated in an active area of the LCD 100, according to the present invention. The LCD 100 may, for example, a thin-film transistor (TFT) LCD. For better understanding the present invention, only elements pertinent to aspects of the embodiment have been shown.
[0021]In the embodiment, the LCD 100 may include a TFT substrate 11, on a top surface of which a first dielectric layer 12 is formed. The first dielectric layer 12 may, for example, be made of silicon oxide (SiO) and / or silicon nitride (SiN). A plurality of TFTs 13 are formed in the first dielectric layer 12. The TFT 13 may include a polysilicon (abbreviated as poly) layer (as a channel) 131, a first metal layer (as a gate) 132 disposed above the polysilicon layer 131, and a second metal layer (as source and drain) 133 disposed on the polysilicon layer 131 and enclosing the first metal layer 132, where ...
third embodiment
[0034]FIG. 6 shows a cross-sectional view of a light-emitting diode (LED) display 400 embedded with a fingerprint sensor, which is integrated in an active area of the LED display 400, according to the present invention. The LED display 400 may, for example, an active-matrix organic light-emitting diode (AMOLED) display. For better understanding the present invention, only elements pertinent to aspects of the embodiment have been shown.
[0035]In the embodiment, the LED display 400 may include a TFT substrate 11, upon which a first dielectric layer 12 is formed. The first dielectric layer 12 may, for example, be made of silicon oxide (SiO) and / or silicon nitride (SiN). A plurality of TFTs 13 are formed in the first dielectric layer 12 and on the TFT substrate 11. The TFT 13 may include a polysilicon (abbreviated as poly) layer (as a channel) 131, a first metal layer (as a gate) 132 disposed above the polysilicon layer 131, and a second metal layer (as source and drain) 133 disposed on ...
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