Bridge arm through protecting system for 6KV three-level integrated gate phase-changing thyristor inverter

A technology for protection systems and voltage source inverters, which is applied in the direction of converting AC power input to DC power output, electrical components, and output power conversion devices, which can solve the problems of damaged, complicated, and slow switching devices.

CN1384593AInactive Publication Date: 2002-12-11ZHONGSHAN MINGYANG ELECTRIC
0 Cites 17 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2002-12-11
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention belongs to the field of three-level voltage source inverter. The bridge arm through protecting system includes a bridge arm through protecting IGCT switching device connected between the quadruple input filtering and rectifying circuit and inverter, a short-circuit signal generator and a pulse state protecting control circuit as well as a fault detecting and pulse blocking circuit comprising gate signal feedback circuit and IGCT fault diagnosing circuit. In some fault occurs, the electric connection to the rectifying bridge and the inverter is cut out immediately while the short-circuit current is borne by the IGCTs of the invverter until the fault judging signal opens the pulse blocking system and blocks the IGCTs.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] A 6KV three-level integrated gate commutation thyristor inverter bridge arm through protection system belongs to the field of three-level voltage inverter manufacturing. Background technique

[0002] Integrated gate-commutated thyristor (IGCT) is the latest generation of high-voltage, high-power, and fast-acting power electronic devices. The three-level IGCT inverter composed of it as the main switching device has become the preferred choice of medium and high voltage AC frequency conversion speed control devices. The main direction of development.

[0003] When the bridge arm of the three-level IGCT inverter is short-circuited, the DC capacitor will discharge through the short-circuited bridge arm, and the current rises very fast. Reliable protection must be used to prevent the IGCT device from being damaged. Such as figure 1 As shown, it is one of the bridge arms of a three-level IGCT inverter. Among them, SA1 and SA3 are a pair of tubes, and SA2 ...

Examples

Embodiment Construction

[0013] exist figure 1 Among them, LS1 and LS2 are anode reactors connected to the positive and negative busbar groups respectively.

[0014] exist figure 2 Among them, SA1 is one of the IGCT switching devices, the model is 5SH×08F4502 (the same below), OPAI is the optical fiber transmitter, XRU11 is the optical fiber receiver, and their models are HFBR1521 and HFBR2521 in turn. NUI is a triode, model 9013, UU9F is an inverter model 4049; UU13A is an exclusive OR gate, model 4070, the IGCT gate feedback signal passes through the optical fiber receiver XRU11, transistor NU1, and the signal from the inverter UU9F is The pulse transmission signal PA1 output by the monostable generator UU5A and UU5B of the 4538 is compared together in the XOR gate UU13A of the model 4070 to generate an IGCT gate feedback comparison signal, which passes through the diode D1 of the model IN4148, the resistor R1, and the capacitor C1 The formed threshold delay circuit is sent to the AND gate UU12A ...