4results about How to "Reduce external damage" patented technology

A battery module according to the present application includes: a cell assembly including a plurality of battery cells; a lower case which is opened at a top thereof and has an accommodation space for accommodating the cell assembly; an upper case which is coupled to the lower case to cover a top of the opening of the lower case and has a connection hole which is perforated to communicate with the accommodation space; an upper cover which is coupled to the upper case to cover a top of the upper case, is spaced apart from the upper case to form a buffer space between the upper cover and the upper case, and has a discharge hole which is perforated to allow the buffer space to communicate with the outside; a partition member which has a horizontally elongated shape and is disposed in the buffer space to form a movement path extending from the connection hole to the discharge hole; and a coupling member which is disposed in the movement path, is configured to be coupled to the partition member, and has a movement space which is perforated from one side to the other side of a main body.

The utility model discloses an optical fiber type temperature real-time monitoring device, which comprises a monitoring device main body, two sides of the outside of the monitoring device main body are respectively provided with a protective cover, and the right side of the top end of the monitoring device main body is provided with a connecting line. When the optical fiber type temperature real-time monitoring device is used, a mounting frame arranged in an inner groove in the top of the front end of the monitoring device body is hinged to the interior of the inner groove through a movable head, and when the device is placed on a table top plane for use, the top end of the mounting frame can be lifted upwards from the interior of the inner groove through a top groove, and then the inner groove is formed; then the display screen assembly is turned out upwards from the interior of the inner groove through the movable head, the display watching angle of the display screen assembly at the front end of the mounting frame is adjusted, the influence of light reflection is reduced, numerical values on the display assembly can be conveniently and directly checked and read, and the problem that the use position of the display assembly on the monitoring device is inconvenient to adjust is solved.

The utility model relates to graphite crucible technical field discloses an assembled graphite crucible, including crucible cooperation assembly frame, heating assembly cooperation assembly frame, crucible subassembly and crucible reinforcing subassembly, and the crucible cooperation assembly frame includes base, four risers are arranged on the base equal angle, and the top of four risers is horizontally provided with the support tray, and the support tray is provided with the accommodating groove for adapting to place the crucible subassembly, and the top of support tray and located accommodating groove outside equal angle is provided with the clamping block, and the base is provided with T type sliding slot and is provided with the mounting hole. The utility model discloses through the clamping block on the crucible cooperation assembly frame and the clamping groove on the crucible subassembly cooperation, and the sliding connection of T type sliding block and T type sliding slot through the heating assembly cooperation assembly frame, realizes each component quick assembly and position adjustment, and conveniently according to actual demand flexible configuration.

The invention discloses a semiconductor material subsurface damaged layer detection method comprising the following steps: depositing a protective layer on the surface of a semiconductor material, the protective layer at least covering the damage observation position of the semiconductor material; etching the semiconductor material by adopting a high-energy beam and forming a first section, wherein the depth of the first section is greater than or equal to the estimated damage depth of the semiconductor material; a high-energy beam is adopted to polish the first cross section to form an observation cross section, the polishing direction is the direction facing the protection layer, and the cross section of the damage observation position is exposed on the observation cross section; and the thickness of the protective layer is greater than or equal to the etching depth generated on the protective layer by the component of the deposition energy of the high-energy beam in the direction vertical to the surface of the semiconductor material when the high-energy beam is used for polishing the first cross section. According to the method, the technical effects that the most original damaged layer information is reserved and the accuracy of an observation result is improved in the process of processing the observation section are achieved.