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Chemical mechanical grinding method

A grinding method and chemical-mechanical technology, applied in grinding devices, grinding machine tools, grinding/polishing equipment, etc., can solve the problem that the layer to be ground is not removed cleanly, and achieve the effect of improving uniformity and consistency and improving the grinding effect.

Active Publication Date: 2011-10-05
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0008] The invention provides a chemical mechanical grinding method to improve the phenomenon that after the existing grinding method is used to planarize the wafer, the remaining part of the edge area of ​​the wafer is not completely removed to be polished, and to improve the uniformity of the wafer after planarization and consistency

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  • Chemical mechanical grinding method
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Embodiment Construction

[0047] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0048] The processing method of the present invention can be widely used in various fields, and can utilize many suitable materials to make, and the following is to illustrate by specific embodiment, certainly the present invention is not limited to this specific embodiment, in this field Common replacements known to those of ordinary skill undoubtedly fall within the protection scope of the present invention.

[0049] Secondly, the present invention has been described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagrams showing the structure will not be partially enlarged according to the general scale, which should not be used...

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Abstract

The invention discloses a chemical mechanical grinding method which includes the following steps: a wafer to be ground is provided; the wafer to be ground is absorbed under a grinding head; the grinding head with the wafer to be ground is moved to a rotary table; low downward pressure is imposed on the grinding head, wherein, the ratio of downward pressure imposed on an edge area to that imposed on the central area is between 1.5 and 3 times; and the rotary table and the grinding head are caused to rotate to grind the wafer to be ground. The adoption of the chemical mechanical grinding methodof the invention reduces the total downward pressure on the grinding head, increases the difference in proportion of the central area and the edge area and can raise the uniformity and consistency ofthe grinding technique while improving the problem that oxidate is easily remained in the edge area.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique [0002] With the rapid development of ULSI (Ultra Large Scale Integration), the manufacturing process of integrated circuits has become more and more complex and sophisticated. In order to improve integration and reduce manufacturing costs, the feature size of components (Feature Size) continues to decrease, and the number of components per unit area of ​​the chip continues to increase. It is difficult for planar wiring to meet the requirements of high-density distribution of components, and only multi-layer wiring technology can be used. , using the vertical space of the chip to further increase the integration density of the device. However, the application of multi-layer wiring technology will cause the surface of the silicon wafer to be uneven, which is extremely unfavorable for graphics produc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B29/00H01L21/304
Inventor 李健邓永平
Owner SEMICON MFG INT (SHANGHAI) CORP
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