Chemical mechanical grinding method

Abstract

The invention discloses a chemical mechanical grinding method which includes the following steps: a wafer to be ground is provided; the wafer to be ground is absorbed under a grinding head; the grinding head with the wafer to be ground is moved to a rotary table; low downward pressure is imposed on the grinding head, wherein, the ratio of downward pressure imposed on an edge area to that imposed on the central area is between 1.5 and 3 times; and the rotary table and the grinding head are caused to rotate to grind the wafer to be ground. The adoption of the chemical mechanical grinding method of the invention reduces the total downward pressure on the grinding head, increases the difference in proportion of the central area and the edge area and can raise the uniformity and consistency of the grinding technique while improving the problem that oxidate is easily remained in the edge area.

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique

[0002] With the rapid development of ULSI (Ultra Large Scale Integration), the manufacturing process of integrated circuits has become more and more complex and sophisticated. In order to improve integration and reduce manufacturing costs, the feature size of components (Feature Size) continues to decrease, and the number of components per unit area of ​​the chip continues to increase. It is difficult for planar wiring to meet the requirements of high-density distribution of components, and only multi-layer wiring technology can be used. , using the vertical space of the chip to further increase the integration density of the device. However, the application of multi-layer wiring technology will cause the surface of the silicon wafer to be uneven, which is extremely unfavorable for graphics produc...

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