Integrated circuit with electrostatic discharge protecting circuit

Abstract

The invention discloses an integrated circuit with an electrostatic discharge protecting circuit. The integrated circuit comprises a first power source connecting pad, a second power source connectingThe invention discloses an integrated circuit with an electrostatic discharge protecting circuit. The integrated circuit comprises a first power source connecting pad, a second power source connecting pad, at least one circuit module and a power source clamping circuit. The circuit module comprises a signal connecting pad, an internal circuit and a first bipolar junction transistor. A first parasipad, at least one circuit module and a power source clamping circuit. The circuit module comprises a signal connecting pad, an internal circuit and a first bipolar junction transistor. A first parasitic resistance is arranged between the collector of the first bipolar junction transistor and the second power source connecting pad. The power source clamping circuit comprises at least one first mettic resistance is arranged between the collector of the first bipolar junction transistor and the second power source connecting pad. The power source clamping circuit comprises at least one first metal-oxide-semiconductor transistor and at least one first parasitic bipolar junction transistor.al-oxide-semiconductor transistor and at least one first parasitic bipolar junction transistor.

Description

technical field [0001] The present invention relates to an integrated circuit, in particular to an integrated circuit with an electrostatic discharge protection circuit, and the integrated circuit applies bipolar junction transistor and substrate trigger (substrate trigger) technology to enhance / improve the electrostatic protection capability. Background technique [0002] With the advancement of science and technology, the technology of integrated circuit technology has also been continuously developed. As known to those skilled in the field of integrated circuits, various electronic circuits can be integrated / formed on a chip, and in order to enable the chip to receive an external voltage source (such as a bias power supply) and exchange For data, conductive pads are provided on the chip. For example, in order to transmit the bias voltage, a power pad (power pad), that is, a VDD terminal and a VSS terminal, may be provided on the chip. In addition, signal pads, namely in...

AI Technical Summary

Problems solved by technology

[0008] However, due to the turn-on uniformity characteristics of the NMOS transistor 132 and the PMOS transistor 134, if the NMOS transistor in the power clamping circuit 130 When the size of 132 or PMOS transistor 134 increases, its electrostatic protection ability cannot be enhanced consistently, so a new electrostatic discharge protection mechanism is urgently needed to achieve the enhancement of its electrostatic discharge when the circuit size increases. Discharge protection capability

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