Light emitting diode crystal grain and manufacture method thereof

Abstract

The invention relates to a light emitting diode crystal grain comprising a substrate, a semiconductor light emitting structure, a metal layer, a buffering layer, wherein the semiconductor light emitting structure is arranged on the substrate; a transparent conductive layer is arranged on the surface of the semiconductor light emitting structure, an electrode layer is arranged on the surface of the transparent conductive layer; the buffering layer is arranged around the metal layer; the metal layer and the buffering layer are arranged between the transparent conductive layer and the semiconductor light emitting structure; schottky contact is formed between the metal layer and the semiconductor light emitting structure; and ohmic contact is formed between the buffering layer and the semiconductor light emitting structure. Since the schottky contact is formed between the metal layer and the semiconductor light emitting structure, the ohmic contact is formed between the buffering layer and the semiconductor light emitting structure, and a contact resistance of the schottky contact is bigger, electric current is diffused towards edges of the light emitting diode crystal grain, and further the uniformity of the electric current distribution is increased.

Description

technical field [0001] The invention relates to a light-emitting diode grain and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor element that can convert electric current into light in a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] A light emitting diode grain generally includes a p-type semiconductor layer, an active layer, an n-type semiconductor layer, and electrodes formed on the p-type semiconductor layer and the n-type semiconductor layer. When a voltage is applied to the electrodes at both ends of the LED grain, holes and electrons will recombine in the active layer and emit photons. One of the problems faced by LED grains in the application pr...

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Problems solved by technology

In order to prevent the light emitted by the active layer from being blocked by the electrode, the area of ​​the electrode is usually set relatively small. At this time, the current density at the position below the electrode is relatively high, and the current density at the position away from the electrode is relatively small, thus The current distribution in the n-type semiconductor layer of the LED grain is uneven, and the light extraction efficiency of the LED grain is low

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