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Apparatus for heat-treating semiconductor substrate

A heat treatment device and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve problems such as poor processing, and achieve the effect of suppressing poor processing

Active Publication Date: 2012-05-30
MITSUI E&S MACHINERY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Therefore, it is an object of the present invention to provide a semiconductor substrate heat treatment apparatus capable of solving the above-mentioned problems, which applies a horizontal magnetic flux to the susceptor and can suppress heat dissipation from the upper and lower ends during batch processing. problems caused by poor handling

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  • Apparatus for heat-treating semiconductor substrate
  • Apparatus for heat-treating semiconductor substrate
  • Apparatus for heat-treating semiconductor substrate

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Embodiment 2

[0060] Next, a second embodiment of the heat treatment apparatus of the present invention will be described in detail with reference to the drawings. The general configuration of the heat treatment apparatus of this embodiment is the same as that of the heat treatment apparatus 10 of the above-mentioned first embodiment. therefore, figure 1 The reference numerals obtained by adding 100 to the reference numerals denote the same configuration as that of the heat treatment apparatus 10 of the above-mentioned first embodiment, and detailed description thereof will be omitted. It should be noted that the difference from the heat treatment apparatus 10 of the first embodiment is that a temperature detection device 140 is provided in the heat treatment apparatus of this embodiment.

[0061] The temperature detection device 140 can be a radiation type temperature detection device, but more preferably as figure 2 As shown, contact type temperature detection devices such as thermoco...

Embodiment 3

[0067] Next, refer to image 3 A third embodiment of the heat treatment apparatus of the present invention will be described. The general configuration of the heat treatment apparatus of this embodiment is also the same as that of the heat treatment apparatuses 10 and 110 of the first and second embodiments. therefore, figure 1 The reference numerals obtained by adding 200 to the reference numerals denote the same configuration as that of the heat treatment apparatus 10 of the first embodiment described above, and detailed description thereof will be omitted. The difference between the heat treatment apparatus of the present embodiment and the heat treatment apparatuses 10 and 110 of the first and second embodiments lies in the structure of the induction heating coil. Therefore, in order to clarify the above differential structure, image 3 The plan view structure of the heat processing apparatus of embodiment is shown.

[0068] The heat treatment device 210 of the presen...

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Abstract

Provided is an apparatus for heat-treating a semiconductor substrate, which is capable of applying a horizontal magnetic flux to susceptors and is capable of suppressing treatment failures due to heat dissipation generated at the upper and lower end portions when batch processing is performed. The apparatus is characterized in having: a boat (12), which is configured by laminating, in the perpendicular direction, a plurality of susceptors (14) to be treated, each of said susceptors having a wafer (18) mounted thereon, and auxiliary susceptors (16), which are disposed to sandwich the susceptors (14) in the perpendicular direction,an induction heating coil, which is disposed on the outer circumferential side of the boat (12), and forms an alternating current magnetic flux in the direction parallel to the wafer mounting surface of the susceptors (14),and a power supply unit (36) which supplies power to the induction heating coil. The apparatus is also characterized in that the induction heating coil is composed of a main heating coil (22), which has a high ratio of heating the susceptors (14), and auxiliary heating coils (24, 26), which have high ratio of heating the auxiliary susceptors (16), and that the power supply unit (36) has a zone control means, which controls the ratios of power to be supplied to the main heating coil (22) and the auxiliary heating coils (24, 26).

Description

technical field [0001] The present invention relates to a heat treatment apparatus for a semiconductor substrate, and more particularly, to a heat treatment apparatus for a semiconductor substrate suitable for controlling the temperature of an object to be heated when heating a substrate such as a large-diameter wafer. Background technique [0002] Patent Document 1 and Patent Document 2 disclose as devices for heat-treating substrates such as semiconductor wafers by induction heating. Such as Figure 5 As shown, the heat treatment apparatus disclosed in Patent Document 1 is a batch-type heat treatment apparatus, which is constituted by placing wafers 2 stacked in multiple layers into a processing quartz tube 3, and disposing graphite or the like on the outer periphery of the processing quartz tube 3. The heating tower 4 is formed of conductive members, and a solenoid-shaped induction heating coil 5 is disposed on the outer periphery of the heating tower 4 . According to th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324
CPCH01L21/67109H01L21/324
Inventor 宫田淳也内田直喜
Owner MITSUI E&S MACHINERY CO LTD