Circuit unit

A circuit unit and voltage technology, which is applied to amplifiers with only semiconductor devices, amplifiers with field effect devices, and improved amplifiers to reduce nonlinear distortion, etc., can solve waveform modulation, amplifier output waveform deterioration, and limited working range of amplifier circuits and other problems, to achieve the effect of smoothing the change law and suppressing the modulation phenomenon

Active Publication Date: 2013-06-05
SOI MICRO CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This phenomenon deteriorates the output waveform of the amplifier and reduces the working stability and load adaptability
When the drain-source voltage is low, the equivalent capacitance changes drastically, so the waveform modulation phenomenon is easy to occur when the FET is working at low voltage
In order to alleviate this phenomenon, the usual practice is to avoid the FET working in a low-voltage state, which will limit the working range of the entire amplifier circuit.

Method used

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Embodiment 1

[0026] like Figure 5 As shown, take the class E power amplifying circuit of this embodiment applied to a 13.56 MHz radio frequency power supply as an example. Field effect transistor Q2, inductor L1, capacitor C3, inductor L2 and capacitor C4 constitute a typical class E power amplifier circuit. In the circuit unit for compensating the nonlinear capacitance of the RF FET provided in this embodiment, the voltage source is composed of the power supply Vb and the capacitor C1, the switching diode is the diode D1, the decoupling capacitor is the capacitor C2, and the varactor diode is composed of the diode D2 and the field effect. Tube Q1 constitutes.

[0027] In this example, the field effect transistor Q2 to be compensated is DE150-101N09A, the drain-source capacitance of the field effect transistor Q2 varies from about 1400pF to 200pF, and the corner voltage is about 7V. The power supply Vb selects the turning voltage of 7V, and the capacitor C1 is the power supply decouplin...

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Abstract

The invention relates to the technical field of amplifiers, in particular to a circuit unit of a compensation radio frequency field-effect tube and a nonlinear capacitor. The circuit unit comprises a voltage source, a switching diode, a decoupling capacitor and a varactor diode, wherein the voltage source and the switching diode are in series connection, the circuit in series connection and the decoupling capacitor are in parallel connection, the circuit in parallel connection and the varactor diode are in series connection, the circuit in series connection and a field-effect tube to be compensated are in parallel connection, and both the negative electrodes of the switching diode and the varactor diode are connected with the decoupling capacitor. When the compensation circuit unit and the field-effect tube are in parallel connection, the change rule of the overall equivalent capacitance in parallel connection to drain-source voltage of the field-effect tube is more gentle, so that the modulation phenomenon of a resonant amplification circuit of the radio frequency field-effect tube is effectively suppressed.

Description

technical field [0001] The invention relates to the technical field of amplifiers, in particular to a circuit unit for compensating the nonlinear capacitance of a radio frequency field effect tube. Background technique [0002] The drain-source equivalent capacitance of the FET varies with the voltage between the drain and the source. The higher the voltage, the smaller the capacitance, and its variation law has nonlinear characteristics, such as figure 1 shown. [0003] If the FET is used in a resonant amplifier circuit, the drain-source equivalent capacitance is connected in parallel with the resonant tank and is a part of the resonant tank capacitance. As the voltage instantaneous value of the amplified waveform changes, the resonant capacitance also changes. Due to the nonlinearity of the change of the resonant capacitance, when the resonant circuit and the amplifier load are under certain conditions, the FET resonant amplifier circuit will self-excited oscillation, re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H03F3/16
Inventor 赵章琰李勇滔李英杰夏洋王文东
Owner SOI MICRO CO LTD
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