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11 results about "Nonlinear capacitance" patented technology

A method and system for digital signal generation and processing for synchronous rectification

The application belongs to the technical field of digital signal processing, and particularly discloses a digital signal generation and processing method and system for synchronous rectification, wherein the method comprises the following steps: obtaining the staggered sampling code stream of a synchronous rectification device, and outputting time-aligned voltage and current characteristic values after group delay hard compensation; performing polynomial thermodynamic school correction in combination with discrete shell temperature sampling values; performing physical safety working area boundary checking on the corrected characteristic values, addressing and interpolating output of the target optimal conduction timing value in the irregular lattice space; extracting a feature vector to perform recursive least square prediction, and outputting an overshoot prediction extreme value; performing discrete charge integration in combination with a nonlinear capacitance function, and iteratively outputting a target dead time value based on the charge conservation criterion; and the application has the advantages of accurate control timing, physical boundary safety and dead time self-adaptation.
Owner:XIAN SAIERCOM CO LTD

An optical radar common aperture off-axis imaging system

This invention relates to the field of optical imaging technology, specifically providing an optical radar co-aperture off-axis imaging system, comprising: an off-axis mirror assembly, a frequency-splitting device, a radar transceiver system, and an optical imaging system. The frequency-splitting device is disposed in the rear optical path of the secondary mirror and is used to reflect light waves and transmit microwaves. The frequency-splitting device includes a frequency-selective surface, which comprises an FSS pattern layer and a bias line layer. The FSS pattern layer includes periodically arranged FSS units. Nonlinear capacitors are electrically connected to the FSS units. The bias line layer applies a voltage to the nonlinear capacitors according to the received microwave band. By changing the voltage applied to the nonlinear capacitors, the resonant frequency of the FSS units is tuned, thereby changing the microwave passband frequency of the frequency-splitting device. This invention not only achieves a reflective wave-transmitting microwave design but also solves the problem that transmitting only a single band of microwaves in microwave-transmitting and light-reflecting methods is difficult to adapt to different task requirements.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

An ultra-wideband phase shifter based on fully distributed nonlinear transmission line

PendingCN122456160AUltra-widebandDielectric
The application discloses a kind of based on full distribution nonlinear transmission line's ultra-wideband phase shifter, belong to communication technical field.The full distribution nonlinear transmission line includes: substrate and be located on the substrate heterojunction layer, as the cathode of Schottky diode ground line and as the signal line of Schottky diode anode are set on the heterojunction layer, cathode anode is connected through two-dimensional electron gas channel formed in heterojunction layer;The full distribution nonlinear transmission line is configured to receive anode bias by the signal line, to make the equivalent nonlinear capacitance of the Schottky diode change with the change of anode bias, and regulate the effective dielectric constant of the full distribution nonlinear transmission line.The application changes the equivalent nonlinear capacitance of Schottky diode by adjusting direct current bias applied on signal line, and then regulates the effective dielectric constant of full distribution nonlinear transmission line, realizes continuous, adaptive regulation and control to input signal phase.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Switch capacitance cancellation circuit

Methods and devices used to cancel non-linear capacitances in high power radio frequency (RF) switches manufactured in bulk complementary metal-oxide-semiconductor (CMOS) processes are disclosed. The methods and devices are also applicable to stacked switches and RF switches fabricated in silicon-on-insulator (SOI) technology.
Owner:MURATA MFG CO LTD

A method and system for simulating pulse discharges of a non-linear capacitor

The application discloses a pulse discharge simulation method and system of a nonlinear capacitor. The method comprises the following steps: obtaining a charge quantity-voltage relationship of a dielectric material or a capacitor; obtaining circuit parameters of a discharge circuit to be simulated, and establishing a Kirchhoff equation of the discharge circuit; and iteratively calculating: according to the charge quantity-voltage relationship, the Kirchhoff equation is solved to obtain a numerical sequence of a simulated discharge current and time, and the simulation of a pulse discharge signal of the nonlinear capacitor is realized. The application can accurately simulate the pulse discharge current of the nonlinear capacitor, and is helpful to clearly judge the influence of a related physical field on the discharge current.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Method and system for linearizing a nonlinear capacitance signal for level determination

The present application relates to capacitive liquid level detection technology, and in particular to a kind of nonlinear capacitance signal linearization mapping liquid level determination method and system.By multi-frequency excitation and Maxwell equation set verification identification capacitance field topological structure, analyze and subdivide nonlinear distortion area to ensure mapping monotonicity and field continuity, utilize Lipschitz condition constraint local mapping stability, introduce physical reversibility verification to carry out error tracing and model iteration, finally solidify effective parameter and realize high-precision, high robustness linear conversion of capacitance signal to liquid level value.High precision, high linearity, strong robustness and physical level consistency and explainability of liquid level measurement result are realized.
Owner:NINGBO MOBO COMPRESSOR

A complete modeling method and system for microwave compound semiconductor devices

ActiveCN121212049BCAD circuit designCapacitanceVerilog-A
This invention discloses a full-process modeling method and system for microwave compound semiconductor devices, belonging to the field of microwave electronic device technology. The method includes six steps: device model creation, measured data import, small-signal model parameter extraction, nonlinear current model parameter extraction, nonlinear capacitance model parameter extraction, and global model verification. It achieves one-stop parameter extraction covering the entire process, integrating analytical and optimization algorithms to improve parameter accuracy. Global verification is performed across five dimensions: multi-bias S-parameters, current characteristics, capacitance characteristics, power sweep characteristics, and load pull circle diagram. Combined with commercial microwave simulation software, a directly loadable Verilog A model is output. This invention solves the problems of disjointed processes and insufficient verification dimensions in existing technologies, improving modeling efficiency and accuracy, and providing precise model support for high-frequency, high-power electronic devices.
Owner:YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE (HUZHOU)

Optical radar common aperture off-axis imaging system

The invention relates to the technical field of optical imaging, and particularly provides an optical radar common-aperture off-axis imaging system, which comprises an off-axis reflector group, a frequency division light splitting device, a radar transceiving system and an optical imaging system, and is characterized in that the frequency division light splitting device is arranged on a rear-end light path of a secondary mirror and is used for reflecting light waves and transmitting microwaves; the frequency division light splitting device comprises a frequency selection surface, the frequency selection surface comprises an FSS pattern layer and a bias line layer, the FSS pattern layer comprises periodically arranged FSS units, the FSS units are electrically connected with a nonlinear capacitor, the bias line layer is used for applying voltage to the nonlinear capacitor according to the wave band of received microwaves, and the nonlinear capacitor is connected with the frequency selection surface. The resonant frequency of the FSS unit is tuned by changing the voltage applied to the nonlinear capacitor, so that the microwave passband frequency of the frequency division light splitting device is changed. According to the invention, the reflection wave and microwave transmission design is realized, and the problem that only single-band microwaves are transmitted and different demand tasks are difficult to adapt in a microwave and reflection wave transmission mode is solved.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Optimization method for sparse matrix vector multiplication of multiple same structure matrices

PendingCN122286064ACapacitanceSparse matrix vector
An optimization method for sparse matrix-vector multiplication of multiple matrices with the same structure is applied to the iterative solution process of harmonic balance methods in radio frequency circuit simulation. The method includes: obtaining a first sparse matrix and a second sparse matrix of the circuit, wherein the first and second sparse matrices have the same structure and are used to characterize the nonlinear conductance and nonlinear capacitance characteristics of the circuit, respectively; in response to performing matrix-vector multiplication, in one traversal, simultaneously accessing the non-zero elements located at the same position in both the first and second sparse matrices, and performing multiplication and accumulation operations with the corresponding input vector elements to obtain the output vectors of the corresponding first and second sparse matrices; wherein the input vector is the harmonic component vector of the circuit node voltage. This invention, based on the combined access of multiple matrices with the same sparse structure, significantly reduces loop control overhead, thereby improving the overall efficiency of matrix-vector multiplication.
Owner:BEIJING HUADA JIUTIAN IND SOFTWARE RESEARCH INSTITUTE CO LTD

Linear mapping liquid level determination method and system of nonlinear capacitance signal

The invention relates to a capacitive liquid level detection technology, in particular to a linear mapping liquid level determination method and system of a nonlinear capacitance signal. A capacitance field topological structure is verified and identified through multi-frequency excitation and a Maxwell equation set, a non-linear distortion area is analyzed and subdivided to ensure mapping monotonicity and field continuity, local mapping stability is constrained by using a Lipschitz condition, error tracing and model iteration are performed by introducing physical reversibility verification, and therefore, the local mapping stability is improved. And finally, effective parameters are solidified to realize high-precision and high-robustness linear conversion from the capacitance signal to the liquid level value. High precision, high linearity and strong robustness of a liquid level measurement result and consistency and interpretability of a physical level are realized.
Owner:NINGBO MOBO COMPRESSOR

Silicon carbide super-junction MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with floating column region

PendingCN121772287AMOSFETCapacitance
The invention discloses a silicon carbide super-junction MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with a floating column region in the technical field of semiconductor power devices, which comprises an N-type substrate, an N-type epitaxial layer is formed above the N-type substrate, a floating P column region is formed in the center of the N-type epitaxial layer, a gate trench is formed above the floating P column region, an N + source region and a P-body region are respectively formed on two sides of the gate trench, and a P-body region is formed in the N + source region. A P + contact region is formed on the side face of the N + source region, the P + contact region and the N + source region are in short circuit through a source electrode, and a drain electrode is arranged below the N-type substrate. By arranging the floating P column region, the highly nonlinear capacitance characteristic of the device is improved, voltage overshoot and oscillation are suppressed, and the anti-electromagnetic interference capability of the device is improved; the FOM (figure of merit) of the device is improved by designing an alternating variable doping column region and widening a floating P column region structure, and the single event burnout resistance of the device is improved.
Owner:SUZHOU KAIWEITE SEMICON