Radio frequency power amplifier with linearizing predistorter
A power amplifier, predistorter technology, applied in the direction of radio frequency amplifiers, amplifiers with semiconductor devices/discharge tubes, high frequency amplifiers, etc. Problems such as driving voltage
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[0017] Such as image 3 As shown, the transconductance (g) of this type of RF power amplifier can be commonly included in, for example, some types of mobile wireless telephone handsets. m The amplifier circuit 30 included in the) stage outputs an RF current signal 32 (I_OUT) in response to the RF input voltage signal 34 (V_IN). The amplifier circuit 30 includes an amplifier MOSFET 36 and a predistorter MOSFET 38. in image 3 In the illustrated embodiment, the amplifier MOSFET 36 is an n-channel (NMOS) device, and the predistorter MOSFET 38 is a p-channel (PMOS) device.
[0018] The gate terminal of the amplifier MOSFET 36 is coupled to the first bias voltage signal 40 (V_BIAS) via the RF choke 42. The gate terminal of the amplifier MOSFET 36 is also coupled to the input voltage signal 34 via the linear coupling capacitor 44. The source terminal of the amplifier MOSFET 36 is connected to ground. The drain terminal of the amplifier MOSFET 36 is connected to a current source circuit...
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