Plasma etching equipment and etching method

Abstract

Disclosed are plasma etching equipment and an etching method. The plasma etching equipment comprises an etching chamber, a first radiofrequency power source, a second radiofrequency power source, and a power pulse controller. The first radiofrequency power source provides radiofrequency power from 2MHz to 120MHz. The second radiofrequency power source provides radiofrequency power from 2MHz to 40MHz. The power pulse controller controls pulse of the first radiofrequency power source and / or second radiofrequency power source, so that the pulse frequency of the first radiofrequency power source is larger than 1000Hz and / or the pulse frequency of the second radiofrequency power source is smaller than 1000Hz. The plasma etching equipment and the etching method have the advantage that sidewall shapes can be improved for the formed etched holes.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma etching device and an etching method. Background technique [0002] With the improvement of the integration level of semiconductor devices, the line width of semiconductor devices is getting smaller and smaller, the control of critical dimensions is becoming more and more important, and the requirements for etching processes are also getting higher and higher. [0003] The etching process is a process for selectively removing the material formed on the surface of the silicon wafer or selectively removing the material of the silicon wafer. The etching process includes wet etching and dry etching. Dry etching has become one of the most commonly used etching processes today due to its high selectivity and strong controllability. [0004] Dry etching is plasma etching. Usually, an etching gas is introduced into a plasma processing device, and the etching gas is io...

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Problems solved by technology

[0005] Existing plasma processing devices include capacitively coupled plasma etching equipment (CapacitorCoupledPlasma, CCP) and inductively coupled plasma etching equipment (InductiveCoupledPlasma, ICP). However, when using the existing plasma processing device for etching process, Especially in deep hole etching, for example, when the aspect ratio (aspectratio) of the etched opening or trench is greater than 10, the etched pattern fidelity (Profile) is low, and the sidewall distortion of the pattern is large

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