Inductance formation method

A technology of inductors and metal layers, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of complex structure and process of Litz wire inductors, limited improvement of the structural quality factor of Litz wire inductors, etc., and achieve the effect of improving reliability

Active Publication Date: 2016-09-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the above-mentioned Litz wire inductor structure has limited improvement on the quality factor, and the Litz wire inductor structure has high requirements on the layout method of each wire, and the process of forming a high-quality factor Litz wire inductor structure is complicated.

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Embodiment Construction

[0029] As mentioned in the background technology, the existing Litz wire inductor structure has limited improvement on the quality factor, and the Litz wire inductor structure has higher requirements on the layout method of each wire, forming a high quality factor Litz wire inductor structure process complex. In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] Please refer to image 3 , the study found that in the case of inputting a high-frequency signal, due to the position of each wire in the Litz wire inductor structure is different, the current I flowing into the Litz wire inductor structure along the direction of the arrow 2 Can not evenly flow in the three wires, the current flowing in the wire 32 with larger magnetic force is less or even no, while the current I 2 Most flow throug...

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Abstract

The invention discloses a forming method of an inductor. The method comprises the following steps: providing a substrate, wherein a welding pad is formed in the first region of the substrate, an inductive metal layer which is flush with the welding pad is formed in a second region, and the welding pad and the inductive metal layer are covered and enclosed by a medium layer; forming a passivation layer on the surface of the substrate; forming a mask layer on the surface of the passivation layer, wherein the mask layer is provided with a first opening and a second opening; removing the mask layer, etching the welding pad and the inductive metal layer by taking the passivation layer as a mask, forming a first groove in the welding pad, and forming a second groove in the inductive metal layer, wherein the depth of the first groove is smaller than the thickness of the welding pad, and the depth of the second groove is smaller than the thickness of the inductive metal layer. By adopting the method, the performance of the inductor can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming an inductor. Background technique [0002] A radio frequency (Radio Frequency, RF for short) circuit in the prior art needs to use a large number of passive components, such as inductors. The miniaturization of passive devices and passive device circuits is an important indicator of radio frequency device technology. [0003] Recent advances in passive device technology have resulted in Integrated Passive Devices (IPDs) in which inductors, capacitors, and resistors are integrated on a single substrate. In these IPDs, one of the goals that the design of the inductance component usually needs to achieve is a high quality factor (Quality Factor), that is, the loss of the input signal is small. [0004] refer to figure 1 , figure 1 It is an equivalent circuit diagram when an inductor is connected to a high-frequency AC circuit, including an inductor L,...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/02H01L23/64
CPCH01L24/05H01L2224/02166H01L2224/05556
Inventor黎坡
OwnerSHANGHAI HUAHONG GRACE SEMICON MFG CORP