Method for forming vertical bipolar transistor in finfet process

A bipolar transistor and process technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficulty in forming vertical bipolar transistors and affecting the function of integrated circuits.

Active Publication Date: 2017-04-05
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above existing problems, the present invention discloses a method for forming vertical bipolar transistors in the FinFET process to overcome the problem in the prior art that it is difficult to form vertical bipolar transistors in the FinFET process, thereby affecting the function of the integrated circuit

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  • Method for forming vertical bipolar transistor in finfet process
  • Method for forming vertical bipolar transistor in finfet process
  • Method for forming vertical bipolar transistor in finfet process

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Embodiment Construction

[0036] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0037] Figure 1-12 It is a schematic diagram of the process structure of forming a vertical bipolar transistor in the FinFET manufacturing process in the embodiment of the present invention; Figure 1-12 Shown:

[0038] This embodiment relates to a method for forming a vertical bipolar transistor in a FinFET manufacturing process, including the following steps:

[0039] Step S1, providing a semiconductor substrate 100 with a first conductivity type. In an embodiment of the present invention, the semiconductor substrate 100 is made of P-type silicon, that is, the first conductivity type is P-type, such as figure 1 structure shown.

[0040] Step S2, partially etching the above-mentioned semiconductor base 100 to form the substrate 101 and several elongated fin structures 102 located on the surf...

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Abstract

The invention discloses a method for forming a vertical bipolar structure in a FinFET manufacturing process. By selectively doping in different regions, the existing FinFET structure is used to form a vertical PNP bipolar transistor, thereby increasing the number of integrated circuits. function.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a vertical bipolar transistor in a FinFET manufacturing process. Background technique [0002] At present, Fin Field Effect Transistor (FinFET), as a new semiconductor device structure, is used to improve the performance of Complementary Metal Oxide Field Effect Transistor (CMOS), and will soon become the mainstream process of technology nodes below 20 nanometers. The process of this structure is complicated, so that the application of vertical bipolar transistors, which are easy to obtain in traditional planar technology, to fin field effect transistors is difficult to realize, and bipolar transistors are necessary devices in analog circuit design. , so the inability to form bipolar transistors in a FinFET process degrades the functionality of the integrated circuit. [0003] Therefore, how to find a method for forming bipolar transistor...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/331
CPCH01L21/8249H01L29/6625
Inventor梅绍宁程卫华
OwnerWUHAN XINXIN SEMICON MFG CO LTD