Ultra-low power non-volatile memory based on standard process

Abstract

The invention discloses an ultra-low power consumption non-volatile memory based on a standard process, which includes a plurality of storage units, and is characterized in that each storage unit includes two different modules, and module A consists of a control tube MA01, a first Tunneling tube MA02, first reading tube MA03 and selection tube MA04 are connected with four transistors; module B is composed of four transistors connected with control tube MB01, second tunneling tube MB02, second reading tube MB03 and selection tube MB04 ; It consists of two modules A and B that are not completely symmetrical, and use the difference in threshold voltage of PMOS and NMOS devices to output current differential signals of different sizes. The two modules A and B are always erased or programmed at the same time. Simple and convenient, the storage unit of the present invention outputs a differential signal, and the difference of the output differential signal is very large, so the reading speed of the unit is relatively fast and the reliability is high.

Description

technical field [0001] The invention belongs to the field of microelectronic technology, and relates to the storage technology of semiconductor integrated circuits, more specifically, an ultra-low power consumption non-volatile memory based on standard technology. Background technique [0002] Many integrated electronic devices require some amount of non-volatile memory. Usually non-volatile memory is used as an independent memory outside the chip or as a memory in the tag chip, mainly to store some control programs, processing instructions or items related to the chip for a long time without power supply. information and more. [0003] Several types of non-volatile memory commonly used at present mainly include erasable programmable read-only memory EPROM, electrically erasable programmable read-only memory EEPROM and flash memory Flash Memory. In addition, there are ferroelectric memory FeRAM, magnetic random access memory MRAM and phase change memory OUM and other new t...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an ultra-low power consumption non-volatile memory structure based on a standard process to solve the deficiencies in the prior art. Its programming and erasing operations are completed using the FN tunneling effect to solve the power consumption High problem; using a pseudo-differential structure, the output differential signal increases the reliability of its reading, and helps to cooperate with the sensitive amplifier of the differential structure to increase the reading speed

Images