Array substrate, manufacturing method thereof, and display device

Abstract

The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. The array substrate includes: a first gate metal layer; a first gate insulating layer on the first gate metal layer; a gate corresponding to the first gate metal layer on the first gate insulating layer an active layer; an etch barrier layer on the active layer; a source-drain metal layer including a source and a drain, the source and the drain respectively contacting both sides of the active layer, and separated from each other on the etching barrier layer; the second gate insulating layer on the source-drain metal layer; and the second gate metal layer on the second gate insulating layer. The present invention can optimize TFT characteristics, reduce gate line resistance, and block light irradiating the active layer, which is beneficial to suppress IR drop, TFT threshold voltage shift and generation of active layer light leakage current, and improve the performance of the display device.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] In recent years, Organic Light Emitting Diode (OLED) has become a very popular emerging flat-panel display product at home and abroad, because OLED display has self-illumination, wide viewing angle, short response time, high luminous efficiency, wide color gamut, low It has the characteristics of working voltage, thin panel, large-size and flexible panel and simple manufacturing process, and it also has the potential to further develop to low cost. [0003] However, in large-scale display applications, since there is a certain resistance in the backplane power supply line, and the driving current of all pixels is provided by the unit power supply line ARVDD, the power supply voltage in the area close to the ARVDD power supply position in the backplane is relatively far...

AI Technical Summary

Problems solved by technology

However, the threshold voltage of the active layer in the thin film transistor (Thin Film Transistor, TFT) on the AMOLED (Active Matrix Organic Light Emitting Diode, active matrix organic light emitting diode) substrate will shift under the irradiation of these lights, affecting Improve the uniformity of the display screen and increase the complexity of the manufacturing process

In addition, for AMOLED devices with a bottom-emitting structure, when the OLED light-emitting material emits light, the light will inevitably irradiate the active layer through the lower substrate, thereby generating light leakage current and increasing the power consumption of the display.

Images