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A kind of hexagonal boron nitride-ytterbium silicon oxide-silicon dioxide composite material and preparation method

A technology of hexagonal boron nitride and silicon dioxide, which is applied in the field of hexagonal boron nitride-ytterbium silicon oxide-silicon dioxide composite materials and its preparation, can solve the problems of low density and achieve low cost, high strength, good The effect of machinability

Active Publication Date: 2017-03-08
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, h-BN / SiO prepared by this method 2 The density of ceramic materials is low, generally 69.0% to 76.8%. Document 10: In the Journal of European Ceramic Society 20, 1923-1928 (2000), Wen et al. showed that h-BN / SiO 2 Ceramic material is a potential high-temperature dielectric material. When the volume content of boron nitride is 60%, the composite material has the best mechanical properties
[0006] But so far, there is no information on the in situ generation of Yb 2 Si 2 o 7 and amorphous SiO 2 Co-enhancing h-BN reported

Method used

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  • A kind of hexagonal boron nitride-ytterbium silicon oxide-silicon dioxide composite material and preparation method
  • A kind of hexagonal boron nitride-ytterbium silicon oxide-silicon dioxide composite material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1: Hexagonal boron nitride phase (h-BN) 95%-ytterbium silicon oxide (Yb 2 Si 2 o 7 ) 1% - silicon dioxide (SiO 2 )4%

[0031] 37.55 grams of 0.5 micron hexagonal boron nitride powder, 0.71 grams of 400-order ytterbium trioxide powder and 1.74 grams of 400-order silicon dioxide powder (in design (h-BN)-ytterbium silicon oxide (Yb 2 Si 2 o 7 )-Silicon dioxide (SiO 2 ) composite material, the content of silicon dioxide in the raw material is excessive, and part of it is used to combine with ytterbium trioxide (Yb 2 o 3 ) in situ reaction to generate ytterbium silicon oxide (Yb 2 Si 2 o 7 ), another part generates amorphous silicon dioxide (SiO 2 ) phase, which is beneficial to suppress the Yb in the raw material 2 o 3 React with BN, so the content of silicon dioxide is more, the following examples are the same), put into the silicon nitride tank and ball mill for 24 hours, dry, sieve through 80 mesh sieves, then pack into graphite mold and cool Compre...

Embodiment 2

[0032] Example 2: Hexagonal boron nitride phase (h-BN) 67%-ytterbium silicon oxide (Yb 2 Si 2 o 7 )5% - silicon dioxide (SiO 2 )28%

[0033] Put 24.89 grams of 1 micron hexagonal boron nitride powder, 3.86 grams of 300-mesh diytterbium trioxide powder and 11.26 grams of 300-mesh silicon dioxide powder into a silicon nitride tank for ball milling for 12 hours, dry, and pass through an 80-mesh sieve , and then put it into a graphite mold for cold pressing, with an applied pressure of 15MPa, and then put it into a hot-press furnace for hot-pressing sintering: the heating rate is 10°C / min, after heating to 1800°C, the sintering pressure is 30MPa, and the temperature is kept for 2 hours. The whole sintering process is carried out under the protection of argon, and the obtained reaction products are analyzed by X-ray diffraction as h-BN, Yb 2 Si 2 o 7 and SiO 2 Three-phase, where SiO 2 The phase is amorphous. Part of Yb was found by microstructural observation 2 Si 2 o 7...

Embodiment 3

[0034] Example 3: Hexagonal boron nitride phase (h-BN) 67%-ytterbium silicon oxide (Yb 2 Si 2 o 7 ) 20% - silicon dioxide (SiO 2 )13%

[0035] Put 20.03 grams of 5-micron hexagonal boron nitride powder, 12.42 grams of 200-mesh ytterbium trioxide powder and 7.55 grams of 200-mesh silicon dioxide powder into a silicon nitride tank for ball milling for 8 hours, dry, and sieve through an 80-mesh sieve , and then put it into a graphite mold for cold pressing, and the applied pressure is 10MPa, and then put it into a hot-press furnace for hot-press sintering. The heating rate is 20°C / min, and the temperature is heated to 1700°C for 1 hour. The whole sintering process is carried out under the protection of argon, and the obtained reaction products are analyzed by X-ray diffraction as h-BN, Yb 2 Si 2 o 7 and SiO 2 Three-phase, where SiO 2 The phase is amorphous, such as figure 2 shown. In this embodiment, the density of the composite material is 3.0 g·cm -3 , the Young's ...

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Abstract

The invention relates to the field of ceramic-base composite materials, in particular to a hexagonal boron nitride (h-BN)-ytterbium silicon oxide (Yb2Si2O7)-silicon dioxide (SiO2) composite material and a preparation method thereof. The volume percentage of the hexagonal boron nitride phase in the composite material is 50-95 percent, the sum of the volume percentages of the ytterbium silicon oxide phase and the silicon dioxide phase is 5-50 percent, and the volume percentages of the ytterbium silicon oxide phase and the silicon dioxide phase are adjusted as required between 5 percentage and 50 percentage. Boron nitride powder, diytterbium trioxide powder and silicon dioxide powder are used as raw materials, are mixed through a physical mechanical method, are dried again, are screened, are held in a graphite mold for cold press molding and are sintered in a hot press furnace in which a protective atmosphere is introduced. By using the method, the hexagonal boron nitride-ytterbium silicon oxide-silicon dioxide composite material can be prepared through in-situ synthesis. The best performance is that the Young modulus is 105GPa, the Vickers hardness is 1.0GPa, the bending strength reaches 256MPa, the compression strength reaches 843MPa, the dielectric constant is 4.8, and the dielectric loss is 0.00086.

Description

technical field [0001] The invention relates to the field of ceramic matrix composite materials, specifically a hexagonal boron nitride (h-BN)-ytterbium silicon oxide (Yb 2 Si 2 o 7 )-Silicon dioxide (SiO 2 ) composite material and its preparation method. Background technique [0002] Among the various crystal forms of boron nitride, hexagonal boron nitride (h-BN) is the most stable. Document 1: Eichler et al. in European Ceramic Society (Journal of European Ceramic Society 28, 1105-1109 (2008)), Document 2: Lipp et al. in European Ceramic Society (Journal of European Ceramic Society 5, 3-9 (1989)), And document 3: Research by Frederikse et al. in Journal of American Ceramic Society 68, 131-135 (1985) shows that hexagonal boron nitride has superior high temperature resistance, thermal shock resistance, high thermal conductivity, and high chemical stability , non-toxic, environmental safety and non-humidity, etc., so it has been widely used in many engineering fields. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/5833C04B35/622
Inventor 陈继新张晰康小录王宣余水淋赵震苗磊周延春
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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