Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An electrode, a thin film transistor, an array substrate and a display device

A technology of thin film transistors and array substrates, applied in the field of display equipment, can solve the problems of unstable image signal transmission speed of the display, increased manufacturing cost of thin film transistors, poor picture quality, etc., so as to avoid the diffusion of copper atoms and reduce the amount of overetching. , the effect of reducing damage

Active Publication Date: 2018-09-25
BOE TECH GRP CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the source and drain resistance of the thin film transistor in the prior art is large, the image signal transmission speed of the display is unstable, and the picture quality is poor, and in order to avoid this situation, drive circuits are installed on both sides of the thin film transistor to drive The electrode will increase the manufacturing cost of the thin film transistor, the embodiment of the present invention provides an electrode, a thin film transistor, an array substrate and a display device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An electrode, a thin film transistor, an array substrate and a display device
  • An electrode, a thin film transistor, an array substrate and a display device
  • An electrode, a thin film transistor, an array substrate and a display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 1 As shown, the embodiment of the present invention provides an electrode, which includes a copper electrode 1, a diffusion barrier layer 2 and an etching protection layer 3;

[0040] The diffusion barrier layer 2 and the etching protection layer 3 are arranged on both sides of the copper electrode 1 respectively, and both the diffusion barrier layer 2 and the etching protection layer 3 are made of zinc-based oxynitride.

[0041] Electrode among the present invention comprises copper electrode 1, diffusion barrier layer 2 and etching protective layer 3, as figure 2 As shown, using this electrode as the source electrode 4 and the drain electrode 5 of the thin film transistor can reduce the resistance of the source electrode 4 and the drain electrode 5 of the thin film transistor, ensure that the image signal transmission speed of the display is stable, and the image quality is high, avoiding Driver circuits are installed on both sides of the thin film tr...

Embodiment 2

[0046] Such as figure 2 As shown, the embodiment of the present invention provides a thin film transistor, the source 4 and the drain 5 of the thin film transistor are the electrodes described in the first embodiment, and the diffusion barrier layer 2 and the thin film of the source 4 and the drain 5 The channel layer 6 of the transistor is contacted.

[0047] Since the electrodes in this embodiment include all the content in Embodiment 1, the same content will not be repeated here.

[0048] Electrode among the present invention comprises copper electrode 1, diffusion barrier layer 2 and etching protective layer 3, use this electrode as source 4 and drain 5 of thin film transistor, can reduce the source electrode 4 of thin film transistor and drain 5 resistance, to ensure that the image signal transmission speed of the display is stable, and the image quality is high, avoiding the installation of drive circuits on both sides of the thin film transistor to drive the electrode...

Embodiment 3

[0057] An embodiment of the present invention provides an array substrate including thin film transistors.

[0058] Since the thin film transistor in this embodiment includes all the content in the second embodiment, the same content will not be repeated here.

[0059] Electrode among the present invention comprises copper electrode, diffusion barrier layer and etching protection layer, uses this electrode as the source electrode and drain electrode of thin film transistor, can reduce the resistance of source electrode and drain electrode of thin film transistor, guarantees the image signal of display The transmission speed is stable, and the image quality is high, avoiding the installation of driving circuits on both sides of the thin film transistor to drive the electrodes, and reducing the manufacturing cost of the thin film transistor; On the other hand, both the diffusion barrier layer and the etching protection layer are made of zinc-based oxynitride, so as to avoid the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an electrode, a thin film transistor, an array substrate and a display device, belonging to the field of display devices. The electrode includes a copper electrode, a diffusion barrier layer and an etching protection layer, and both the diffusion barrier layer and the etching protection layer are made of zinc-based oxynitride. Electrode among the present invention comprises copper electrode, diffusion barrier layer and etching protection layer, uses this electrode as the source electrode and drain electrode of thin film transistor, can reduce the resistance of source electrode and drain electrode of thin film transistor, guarantees the image signal of display The transmission speed is stable, and the image quality is high, avoiding the installation of driving circuits on both sides of the thin film transistor to drive the electrodes, and reducing the manufacturing cost of the thin film transistor; On the other hand, both the diffusion barrier layer and the etching protection layer are made of zinc-based oxynitride, which avoids the diffusion of copper atoms in the copper electrode, reduces the over-etching of the copper electrode, and reduces the damage caused by the diffusion of copper atoms to the channel layer of the thin film transistor. destroy.

Description

technical field [0001] The invention relates to the field of display devices, in particular to an electrode, a thin film transistor, an array substrate and a display device. Background technique [0002] LCD (Liquid Crystal Display, Liquid Crystal Display) and OLED (Organic Light Emitting Display, Organic Light Emitting Display) have occupied an important position in the field of flat panel display due to their advantages of lightness, thinness, low power consumption, high brightness and high image quality. Among them, the liquid crystal pixels on LCD and OLED are driven by the thin film transistors integrated behind them. A thin film transistor includes three electrodes, a source, a gate and a drain. The resistance of the source and the drain will affect the transmission speed and image quality of the image signal of the display. [0003] At present, the mainstream material of the source and drain of thin film transistors is aluminum alloy, the resistance of the source and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/417H01L29/786H01L27/12
CPCH01L27/1214H01L29/41725H01L29/786H01L29/41733H01L27/1288H01L29/45H01L29/66969H01L29/7869H01L29/78618H01L27/1225H01L29/42356
Inventor 王美丽闫梁臣
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com