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A kind of preparation method of ultraviolet reflective film for space

A technology of reflective film and ultraviolet, which is applied in the field of preparation of ultraviolet reflective film for space, can solve problems such as not being able to meet the filtering requirements of solar cells, and achieve the effect of excellent optical performance and high light reflectivity

Active Publication Date: 2018-08-28
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1
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  • Abstract
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  • Application Information

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Problems solved by technology

Therefore, the reflective film in the prior art cannot meet the filtering requirements of this type of solar cell

Method used

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  • A kind of preparation method of ultraviolet reflective film for space
  • A kind of preparation method of ultraviolet reflective film for space
  • A kind of preparation method of ultraviolet reflective film for space

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Embodiment Construction

[0027] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] like figure 1 As shown, a method for preparing an ultraviolet reflective film suitable for space use in triple-junction gallium arsenide solar cells mainly includes the following steps:

[0029] a) pre-treating the cover glass 1: cleaning the cover glass 1;

[0030] b) Preparing the reflective film 2: depositing the reflective film 2 on the surface of the cover glass 1 by electron gun thermal evaporation, and using an ion source to assist the deposition of the reflective film 2 on the surface of the cover glass 1 .

[0031] Wherein, the reflective film 2 is made of high refractive index material HfO 2 and low refractive index material MgF 2 Composite. The reason for this design is that the HfO 2 The layer belongs to the optically transparent band after the sunlight wavelength of 200nm, that is, the absorption is very small, and th...

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Abstract

The invention relates to the technical field of preparation of optical thin films and mainly discloses a preparation method for an ultraviolet reflecting film used in space. The preparation method of the ultraviolet reflecting film used in space comprises the following steps of a) preprocessing a glass cover sheet and cleaning the glass cover sheet, and b) preparing the reflecting film, depositing the reflecting film on the surface of the glass cover sheet through electronic gun heat evaporation, and assisting in depositing the reflecting film on the surface of the glass cover sheet by means of an ion source, wherein the reflecting film is formed by compounding a high-refractive-index material HfO2 and a low-refractive-index material MgF2. The preparation method has the beneficial effects that the ion source is added to assist in depositing the reflecting film so as to improve the film forming quality of an HfO2 layer, increase the migration rate of HfO2 deposition particles and the gather density of an HfO2 film layer and fill gaps in the film. In addition, as the reflecting film is formed by compounding the high-refractive-index material HfO2 and the low-refractive-index material MgF2, the reflecting film with the high refractive rate and good optical performance can be smoothly obtained.

Description

technical field [0001] The invention relates to the technical field of optical film preparation, in particular to a preparation method of an ultraviolet reflective film for space use. Background technique [0002] Since the irradiance intensity of the solar spectrum is mainly distributed in 200-2500nm, and the effective working wavelength of traditional silicon solar cells is 400-1100nm, it is necessary for the glass cover to reflect part of the ultraviolet light to prevent this part of ultraviolet light from being absorbed by the solar cell. The temperature of the battery body increases to reduce its output power. For this reason, a corresponding reflective film is designed on the glass cover of the traditional silicon solar cell to ensure that the high-energy ultraviolet light is filtered out, and the light with a wavelength greater than or equal to 400nm is retained for the silicon solar cell. [0003] However, with the continuous extension of research in the field of so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/30C23C14/08C23C14/06G02B5/26G02B5/20
Inventor 孙希鹏杜永超肖志斌
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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