AlGaN-based superlattice avalanche-type ultraviolet detector and preparation method thereof

An ultraviolet detector and base superlattice technology, applied in the field of ultraviolet detection, can solve the problems of high noise, low gain, and limited application, and achieve the effects of reducing thermal loss, improving detection sensitivity, and cascading multiplication with high efficiency

Active Publication Date: 2017-02-15
TSINGHUA UNIV
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Problems solved by technology

[0004] Among them, the most commonly used ultraviolet high-sensitivity photodetection devices are ultraviolet photomultiplier tubes (PMT) and avalanche detector photodiodes based on semiconductor materials. Ultraviolet PMT has the advantages of high gain, low noise and linear controllability, but it is a vacuum device. , bulky, and the glass shell is fragile, so the application is relatively limited
Semiconductor avalanche detectors are small in size and easy to integrate, but the gain is not high, the noise is large, and they often cannot work stably in the linear controllable mode, and the application is relatively limited

Method used

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  • AlGaN-based superlattice avalanche-type ultraviolet detector and preparation method thereof
  • AlGaN-based superlattice avalanche-type ultraviolet detector and preparation method thereof

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Embodiment Construction

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0027] figure 1 A schematic structural view of the AlGaN-based superlattice avalanche type ultraviolet detector provided by Embodiment 1 of the present invention is shown, as shown in figure 1 As shown, the AlGaN-based superlattice avalanche type ultraviolet detector of the present embodiment includes:

[0028] A substrate, on which an n-type la...

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Abstract

The invention provides an AlGaN-based superlattice avalanche-type ultraviolet detector which comprises a substrate. An n-type layer, an i-type superlattice multiplication layer, an i-type photosensitive absorption layer and a p-type layer are sequentially arranged on the substrate. An n-type ohmic electrode is arranged on the n-type layer. A p-type ohmic electrode is arranged on the p-type layer. The i-type superlattice multiplication layer is an AlN / GaN superlattice. The ultraviolet detector provided by the invention has the advantages of small volume, easy integration, linear controllability, high gain and low noise.

Description

[0001] This application is a divisional application of a Chinese invention patent application with an application date of July 25, 2014, an application number of 201410360909.8, and a title of "ultraviolet detector and its preparation method". technical field [0002] The invention relates to the field of ultraviolet detection, in particular to an AlGaN-based superlattice avalanche type ultraviolet detector and a preparation method thereof. Background technique [0003] Ultraviolet detection has a wide range of applications in civilian and military fields, including chemical and biological analysis (ozone, pollutants and most organic compounds have absorption lines in the ultraviolet spectral range), flame detection (including fire alarm, missile early warning and guidance, combustion monitoring etc.), optical communication (especially communication between satellites using ultraviolet light with a wavelength less than 280nm), calibration of ultraviolet light sources (instrum...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/18
CPCH01L31/105H01L31/1075H01L31/18H01L31/1804H01L31/1812H01L31/184H01L31/1856Y02P70/50
Inventor 汪莱郑纪元郝智彪罗毅
Owner TSINGHUA UNIV
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