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Nand flash memory storage unit, nand flash memory and method for forming same

A technology of flash memory storage and fins, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as high production costs, achieve the effect of continuous reduction in process size, improve reliability, and reduce read interference

Active Publication Date: 2019-10-22
SHANGHAI FUDAN MICROELECTRONICS GROUP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the existing three-dimensional NAND flash memory, the reading reliability of the memory cell array needs to be improved, the data density needs to be improved, and the manufacturing cost is high

Method used

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  • Nand flash memory storage unit, nand flash memory and method for forming same
  • Nand flash memory storage unit, nand flash memory and method for forming same
  • Nand flash memory storage unit, nand flash memory and method for forming same

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Embodiment Construction

[0034] As mentioned in the background, in the existing three-dimensional NAND flash memory, the reading reliability of the memory cell array needs to be improved, and the data density needs to be improved.

[0035] For this reason, the present invention provides a kind of new NAND flash storage unit, and described NAND flash memory storage unit comprises semiconductor substrate; Be positioned at the fin portion on described semiconductor substrate; A first isolation layer, a first PN stack, a second isolation layer, and a second PN stack; the first PN stack includes a first source layer, a first channel layer, and a first drain layer; the second The PN stack includes a second source layer, a second channel layer and a second drain layer. The first source layer, the first channel layer and the first drain layer of the NAND flash memory storage unit are vertically stacked, therefore, the NAND flash memory storage unit has a good process size continuous reduction capability, and ...

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Abstract

A NAND flash memory storage unit, a NAND flash memory and a forming method thereof. The NAND flash storage unit includes a semiconductor substrate; a fin located on the semiconductor substrate; the fin includes a first PN stack and a second PN stack, and the second PN stack is located on the first above a PN stack; the first PN stack includes a first source layer and a first drain layer, and the first source layer and the first drain layer are directly stacked in the fin height direction; the The second PN stack includes a second source layer and a second drain layer, and the second source layer and the second drain layer are directly stacked in the fin height direction. The NAND flash storage unit has a good capability of continuously shrinking the process size, and the NAND flash storage unit can solve the problem of memory unit read disturbance from the device structure. At the same time, the method for forming the NAND flash memory is simple, and the process cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a NAND flash memory storage unit, a NAND flash memory and a forming method thereof. Background technique [0002] NAND flash memory (NAND flash) is a kind of non-volatile flash memory. Its main function is to store data. It has high storage cell density and fast writing and erasing speed. At the same time, the storage cell size of NAND flash memory is almost the same as that of NOR flash memory storage cell. Half of that, which can provide higher capacity within a given mold size. [0003] A kind of storage unit of existing NAND flash memory such as figure 1 As shown, there is a channel layer 110 on a semiconductor substrate (not shown), and a tunneling dielectric layer 120, a floating gate 130, a gate dielectric layer 140, and a control gate 150 are sequentially arranged on the channel layer 110, and the The other area is the dielectric layer 160 . As the size of se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H01L27/11551H01L29/10H01L29/423H01L21/28H10B41/35H10B41/20
CPCH01L29/1033H01L29/42324H10B41/35
Inventor 黄新运肖磊刘红霞沈晔晖沈磊刘岐
Owner SHANGHAI FUDAN MICROELECTRONICS GROUP
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