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Process monitoring method and process monitoring system

A monitoring system and process technology, applied in general control systems, control/regulation systems, program control in sequence/logic controllers, etc., can solve the problems of changing etching rate, very large, difficult to control etching process, etc.

Active Publication Date: 2020-07-28
MANZ TAIWAN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] As far as the wet etching method is concerned, the control of wet etching ability has a great impact on product quality and device performance
The existing wet etching method is set within a fixed etching time by controlling the liquid concentration to accelerate or decrease to achieve the desired etching film thickness. However, the etching rate will change due to the change of liquid concentration and reaction temperature over time, so that The etching process (etching process) appears to be difficult to control

Method used

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  • Process monitoring method and process monitoring system
  • Process monitoring method and process monitoring system
  • Process monitoring method and process monitoring system

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Embodiment Construction

[0038] The specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings and examples. The following examples are only used to illustrate the technical solutions of the present invention more clearly, but not to limit the protection scope of the present invention.

[0039] figure 1 It is a schematic diagram of the process monitoring system of the present invention. Please refer to figure 1 . The process monitoring system 100 of this embodiment is, for example, a system for monitoring an etching process. The process monitoring system 100 includes a process unit 110 , a PLC control unit 120 , a data processing unit (data processing unit) 130 , a man-machine interface unit 140 and a database unit (database unit) 150 .

[0040] The process unit 110 is used to fabricate the substrate. The process unit 110 is, for example, an etching machine for etching the substrate. The process unit 110 is used to transm...

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Abstract

Provided is a process monitoring method, comprising the steps of receiving a set parameter; receiving a process parameter within a surveillance designated time of the etching time; processing the process parameter within each sampling time of the surveillance designated time, and generating the feature code of the process parameter within the process sampling range; determining the process compensation time, and searching similar set parameter based on the feature code of the process parameter so as to determine the process compensation time of the etching time; updating the feature code of the process parameter to a database parameter. Besides, a process monitoring system is also brought forward.

Description

technical field [0001] The present invention relates to a process monitoring method and a process monitoring system, and in particular to a process monitoring method and a process monitoring system for dynamically improving substrate etching time. Background technique [0002] Electronic devices such as semiconductor elements or liquid crystal display devices are built by accumulating multiple precise patterns through multiple process steps, one of which is an etching step. There are mainly two types of etching in the microelectronics process, one is a wet etching method using a liquid etchant, and the other is a dry etching method using a plasma. [0003] As far as the wet etching method is concerned, the control of wet etching ability greatly affects product quality and device performance. The existing wet etching method is set within a fixed etching time by controlling the liquid concentration to accelerate or decrease to achieve the desired etching film thickness. Howev...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05B19/05
CPCG05B19/058Y02P90/02
Inventor 萧郁伦胡金桢
Owner MANZ TAIWAN