Method for cutting propagation of long-stem Hedinglan and cutting propagation medium of Long-stem Hedinglan

A cutting substrate and cutting propagation technology are applied in the directions of vegetative propagation, planting substrate, botanical equipment and methods, etc., which can solve the problems of low propagation efficiency and high requirements on propagation conditions of Long-stemmed Orchid chinensis, so as to improve the reproductive survival rate and improve the Survival rate, guaranteed effect of varieties

Active Publication Date: 2021-01-26
SHENZHEN XIANHU BOTANICAL GARDEN ADMINISTRATION
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a method for the cutting propagation of the long-stem Hedinglan, to solve the technical problems of the current low-efficiency and high-required breeding conditions of the Long-stem Hedinglan

Method used

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  • Method for cutting propagation of long-stem Hedinglan and cutting propagation medium of Long-stem Hedinglan

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Comparison scheme
Effect test

Embodiment 1

[0034] The present embodiment provides a kind of method for cutting propagation of long-stem Hedinglan, which comprises the following steps:

[0035] S11. Preparation of cutting materials:

[0036] Select the 1-year-old healthy branches of the long-stem Hedinglan, remove the stem nodes that have grown inflorescences from the selected branches, and cut them into cuttings according to every 2 stem nodes for subsequent use;

[0037] S12. Laying of cutting substrate and seedbed:

[0038] Select orchid gravel with a particle size not greater than 10mm, and lay it into a seedbed with a thickness of 10cm;

[0039] S13. Cutting and induction:

[0040]After the seedbed laid in step S12 is fully wetted by spraying water, the cuttings in S11 are inserted into the matrix at an angle of 20 degrees between the cuttings and the bed surface of the seedbed, and the degree of exposure of each cutting matrix is ​​4 cm. Spray once every three days and add gibberellin (GA) 1mg / L, the foliar fer...

Embodiment 2

[0044] The present embodiment provides a kind of method for cutting propagation of long-stem Hedinglan, which comprises the following steps:

[0045] S21. Preparation of cutting materials:

[0046] Select the 2-year-old healthy branches of the long-stem Hedinglan, remove the stem nodes that have grown inflorescences from the selected branches, and cut them into cuttings according to every 2-3 stem nodes for subsequent use;

[0047] S22. Laying of cutting substrate and seedbed:

[0048] Limestone with a particle size not greater than 10mm is selected: volcanic stone is laid into a seedbed with a thickness of 5cm according to the mixed crushed stone with a volume ratio of 5:1;

[0049] S23. Cutting and induction:

[0050] After the seedbed laid in step S22 is fully moistened by spraying water, the cuttings in S21 are inserted into the matrix at an angle of 30 degrees between the cuttings and the surface of the seedbed, and each cutting is exposed to a degree of 4-5 cm. Spray ...

Embodiment 3

[0054] The present embodiment provides a kind of method for cutting propagation of long-stem Hedinglan, which comprises the following steps:

[0055] S31. Preparation of cutting materials:

[0056] Select the 2-year-old healthy branches of the long-stem Hedinglan, remove the stem nodes that have grown inflorescences from the selected branches, and cut them into cuttings according to every 1-3 stem nodes for subsequent use;

[0057] S32. Laying of cutting substrate and seedbed:

[0058] Select Phytophthora with a particle size not greater than 10mm: Limestone is mixed according to the volume ratio of 1:1 to form a seedbed with a thickness of 10cm;

[0059] S33. Cutting and induction:

[0060] After the seedbed laid in step S32 is fully moistened by spraying water, the cuttings in S21 are inserted into the substrate at an angle of 10 degrees between the cuttings and the seedbed surface, and the substrate of each cutting is exposed to a degree of 4-5cm. Spray once every three ...

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Abstract

The invention discloses a method for cutting and propagating a long-stem Hecres orchid and a substrate for cutting and propagating a long-stem Hecres orchid. The stem nodes that have grown inflorescences are cut into cuttings; the cuttings are cut into the cuttage substrate of the long-stem Hecres orchid after being wetted; the cuttings that have been cut into the cuttage substrate are subjected to cutting management treatment, including spraying leaves on the cuttings. surface fertilizer. The method for cutting and propagating the long-stem orchid orchids of the present invention uses the branches of the long-stem orchid orchids as the reproductive tissue, and adopts the cutting method for propagation, which effectively avoids the existing problems of using seeds and ramets with low reproductive efficiency and high requirements for reproductive conditions. . In addition, the selected fringe cuttings of the long-stem Hedinglan are inserted into the cutting substrate of the Long-stem Hedinglan for propagation, thereby effectively improving the survival rate of reproduction and ensuring the stability of the variety.

Description

technical field [0001] The invention belongs to the technical field of plant tissue propagation, and in particular relates to a method for cutting and propagating a long-stem Hedinglant and a substrate for cutting and propagating a long-stem Hedinglant. Background technique [0002] Phaius longicruris Z.H.Tsi is a cylindrical pseudobulb, 20-40 cm long, 1.3-2 cm thick, with 3-8 nodes and 5-7 cm long internodes. The leaves are usually 6, alternate on the upper part of the pseudobulb, the leaves are elliptic or elliptic-lanceolate, the scapes are usually 2, extracted from the base or near the base, up to 45 cm long; the inflorescence peduncle is 5 mm thick, sparse 3-5 sheaths, glabrous; racemes with a few flowers, medium-sized flowers, open, sepals and petals light yellow-green; petals glabrous, obovate-lanceolate, pollen clusters nearly ovate-triangular; flowering period 8 -October. The long-stem Hedinglan is produced in southern Yunnan (Jinghong and Mengla) in China. It is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): A01G2/10A01G24/15A01G24/10A01G31/00
CPCA01G31/00A01G2/10A01G24/10A01G24/15
Inventor 李凌飞陈朋杨蕾蕾
Owner SHENZHEN XIANHU BOTANICAL GARDEN ADMINISTRATION
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