A method for preparing magnesium-doped aluminum nitride strip structure material

A structural material, aluminum nitride technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve problems such as magnesium-doped aluminum nitride strip structure that has not been reported, achieve low cost, simple method, good repeatability

Active Publication Date: 2022-05-06
SHAANXI SCI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are not many reports on the preparation of aluminum nitride-based dilute magnetic semiconductors by different methods and methods, and the preparation of magnesium-doped aluminum nitride strip structures by using DC arc plasma method has not been reported so far.

Method used

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  • A method for preparing magnesium-doped aluminum nitride strip structure material
  • A method for preparing magnesium-doped aluminum nitride strip structure material
  • A method for preparing magnesium-doped aluminum nitride strip structure material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0021] Example 2, put high-purity magnesium and aluminum (99.99%) into a mixer with a mass ratio of 1:9 and mix them evenly. Take out 10g of the mixed powder, use a tablet press to briquette, and press into a cylinder. The pressed mixed block is placed in the anode in the reaction chamber of the DC arc discharge apparatus. The anode of the DC arc discharge device is a copper pot, the cathode is a tungsten electrode with a diameter of 3mm, and the anode is fed with circulating cooling water. The reaction chamber of the DC arc discharge device is evacuated (less than 5pa), and high-purity nitrogen is introduced as the reaction gas, and the total reaction pressure is 40kPa. The voltage is 35V and the current is 120A. After the discharge lasted about 20 minutes, white powder was collected on the anode copper pot and tungsten rod, which was the strip structure material of magnesium doped aluminum nitride.

[0022] Such as figure 2 As shown, the X-ray diffraction spectrum of ma...

Embodiment 3

[0025] Example 3, put high-purity magnesium and aluminum (99.99%) into a mixer with a mass ratio of 1:8 and mix them evenly. Take out 10g of the mixed powder, use a tablet press to briquette, and press into a cylinder. The pressed mixed block is placed in the anode in the reaction chamber of the DC arc discharge apparatus. The anode of the DC arc discharge device is a copper pot, the cathode is a tungsten electrode with a diameter of 5mm, and the anode is fed with circulating cooling water. The reaction chamber of the DC arc discharge device is evacuated (less than 5pa), and high-purity nitrogen is introduced as the reaction gas, and the total reaction pressure is 40kPa. The voltage is 25V and the current is 100A. After the discharge lasted for about 25 minutes, white powder was collected on the anode copper pot and tungsten rod, which was a strip structure material of magnesium-doped aluminum nitride.

Embodiment 4

[0026]Example 4, put high-purity magnesium and aluminum (99.99%) into a mixer with a mass ratio of 1:10 and mix them evenly. Take out 10g of the mixed powder, use a tablet press to briquette, and press into a cylinder. The pressed mixed block is placed in the anode in the reaction chamber of the DC arc discharge apparatus. The anode of the DC arc discharge device is a copper pot, the cathode is a tungsten electrode with a diameter of 5mm, and the anode is fed with circulating cooling water. The reaction chamber of the DC arc discharge device is evacuated (less than 5pa), and high-purity nitrogen gas is introduced as the reaction gas, and the total reaction pressure is 50kPa. The voltage is 35V and the current is 120A. After the discharge lasted for about 25 minutes, white powder was collected on the anode copper pot and tungsten rod, which was a strip structure material of magnesium-doped aluminum nitride.

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Abstract

This application discloses a method for preparing magnesium-doped aluminum nitride strip-shaped structural materials, a. put aluminum and magnesium with a purity of 99.99% into a mixer and mix them evenly, and take out the mixed powder; b. machine to briquete the mixed powder, and press the mixed powder into a cylindrical structure to form a mixed block; c. put the pressed mixed block into a copper pot in the reaction chamber of a DC arc discharge device, and place the mixed The described reaction chamber of the direct current arc discharge device is evacuated; d. Then, charge nitrogen gas in the described reaction chamber, then energize the described direct current arc discharge device, after reacting for 15-30 minutes, in the copper pot and The white powder collected on the tungsten rod is the strip structure material of magnesium-doped aluminum nitride. The application not only has simple method, good repeatability, low cost, no catalysis, but also is environmentally friendly, and the grown magnesium-doped aluminum nitride strip structure material has high yield and high purity, and has good application prospects.

Description

technical field [0001] The present disclosure generally relates to the technical field of material preparation, and specifically relates to a method for preparing a magnesium-doped aluminum nitride strip structure material. Background technique [0002] According to literature reports, AIN-based dilute magnetic semiconductors have great application prospects because of their high ferromagnetic phase transition temperatures and the possibility of being made into a variety of all-semiconductor spintronic devices. However, the research on it has just started in the world. At present, there are many different methods for the preparation and physical property research of AlN-based dilute magnetic semiconductor materials, but the research mainly focuses on the preparation and physical property characterization of its thin film. Studies have shown that (Al, Cr)N and (Al, Co)N prepared by Frazier et al. have ferromagnetic properties at a Curie temperature of about 350K, while (Al, M...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C01B21/072
CPCC01B21/0722C01P2004/03C01P2002/85C01P2002/72
Inventor徐永生姚彬彬
OwnerSHAANXI SCI TECH UNIV