A resonant tunneling diode and its manufacturing method

A technology of resonant tunneling and manufacturing methods, applied in the field of electronics, can solve the problem that the DC I-V characteristics of devices do not meet the expectations of simulation theory

Active Publication Date: 2021-05-07
XIDIAN UNIV
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Problems solved by technology

Due to the serious leakage current caused by the random fluctuation and diffusion of Al components at the AlGaN / GaN heterojunction interface, it was observed under TEM (Transmission Electron Microscope, transmission electron microscope) that the width of the AlGaN barrier at different positions Different, the tunneling current part of the resonant tunneling diode is suppressed, and the DC I-V characteristics of the device do not meet the simulation theory expectations

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  • A resonant tunneling diode and its manufacturing method
  • A resonant tunneling diode and its manufacturing method
  • A resonant tunneling diode and its manufacturing method

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Embodiment 1

[0069] Embodiment 1: Fabricate a resonant tunneling diode with a GaN quantum well layer with a thickness of 1.8nm and a mixed potential barrier with a layered structure of Al, N, and Ga with a thickness of 2nm.

[0070] Step 1, select a GaN substrate substrate with a diameter of 1.5 inches, and thin the back surface to a thickness of 500nm, such as Figure 3A As shown, a substrate layer 301 is formed.

[0071] Step 2, using high-purity nitrogen gas and triethylgallium as the nitrogen source and gallium source respectively, and silane gas as the n-type doping source, using metal organic chemical vapor deposition MOCVD method, at a temperature of 1000 ° C and a pressure of 40 torr process conditions, such as Figure 3B As shown, the substrate layer 301 is grown on the substrate layer 301 with a thickness of 120nm and a doping concentration of 6×10 18 cm -3 the n + GaN collector ohmic contact layer 302 .

[0072] Step 3, using high-purity nitrogen and gallium as the nitrogen...

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Abstract

The invention provides a resonant tunneling diode and a manufacturing method thereof. The resonant tunneling diode includes an n-type GaN substrate layer, n + GaN collector ohmic contact layer, first GaN isolation layer, first Al, N, Ga, N layered structure mixed barrier layer, GaN quantum well layer, second Al, N, Ga layered structure mixed barrier layer, The second GaN isolation layer, n + GaN emitter ohmic contact layer, ring electrode, circular electrode and passivation layer; the Al, N, Ga layered structure mixed barrier layer includes Al layer, N layer and Ga layer. The invention can eliminate the leakage phenomenon caused by uneven distribution of Al components in the random alloy AlGaN potential barrier.

Description

technical field [0001] The present invention relates to the field of electronic technology, in particular to a resonant tunneling diode (Resonant Tunneling Diode, RTD) and a manufacturing method thereof. Background technique [0002] In recent years, the third-generation wide-bandgap semiconductor materials represented by gallium nitride GaN and silicon carbide SiC, as a new type of semiconductor material, have developed rapidly in the past decade. GaN-based semiconductor materials and devices have excellent properties, such as large band gap, high conduction band discontinuity, high thermal conductivity, high critical field strength, high carrier saturation rate, and high heterojunction interface two-dimensional electron gas concentration. [0003] As an emerging science and technology, terahertz technology has attracted many researchers to study because of its many unique characteristics and advantages. The frequency range of terahertz is 0.1THz to 10THz, which is betwee...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/88H01L21/328
CPCH01L29/66151H01L29/882
Inventor杨林安马遥容涛涛张凯马晓华郝跃
OwnerXIDIAN UNIV