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Memory device and manufacturing method thereof

A manufacturing method and memory technology, which are applied in the direction of electric solid state devices, semiconductor devices, electrical components, etc., to achieve the effect of reducing the complexity of the process, reducing the production cost, and improving the reliability

Active Publication Date: 2019-10-29
WINBOND ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It should be noted that the above problems caused by slits will be more serious when the critical dimension is reduced

Method used

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  • Memory device and manufacturing method thereof
  • Memory device and manufacturing method thereof
  • Memory device and manufacturing method thereof

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Embodiment Construction

[0033] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, preferred embodiments are listed below and described in detail in conjunction with the accompanying drawings. However, any person skilled in the art will understand that the various feature structures in the present invention are for illustration only and are not drawn to scale. In fact, the relative size ratios of various features can be arbitrarily increased or decreased for clarity of illustration. Furthermore, repeated reference signs and / or words may be used in different instances herein. These repeated symbols or words are used for the purpose of simplification and clarity, and are not used to limit the relationship between various embodiments and / or the appearance structures.

[0034] Here, the terms "about" and "approximately" usually mean within 20%, preferably within 10%, and more preferably within 5% of a given value or range. The quantities ...

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Abstract

The invention provides a memory device and a manufacturing method thereof. The memory device includes a substrate, multiple first grid electrode structures, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a contact plug. The first grid electrode structures are formed on the substrate of an array region. The first dielectric layer is formed on the top surface andthe sidewall of the first grid electrode structures. The second dielectric layer is formed on the first dielectric layer and is in direct contact with the first dielectric layer. The second dielectriclayer and the first dielectric layer are made of same materials. The third dielectric layer is formed between the first grid electrode structures and defines a plurality of contact holes exposing thesubstrate. The contact plug is filled in the contact holes.

Description

technical field [0001] The present invention relates to a memory device, and more particularly to a non-volatile memory device and a manufacturing method thereof. Background technique [0002] With the increasing popularity of portable electronic products, the demand for memory devices is also increasing. All portable electronic products (eg, digital cameras, notebook computers, mobile phones, etc.) require miniaturized and reliable memory devices to facilitate data storage and transmission. [0003] In the non-volatile memory, according to whether the data in the memory can be rewritten at any time when using the computer, it can be divided into two categories of products, namely read-only memory (ROM) and flash memory. Among them, the flash memory has gradually become the mainstream technology of the non-volatile memory due to its low cost. [0004] With the trend of miniaturization of electronic products, there is also a demand for miniaturization of non-volatile memory...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11521H01L27/115H10B41/30H10B69/00
CPCH10B69/00H10B41/30
Inventor 李书铭欧阳自明詹孟璋
Owner WINBOND ELECTRONICS CORP
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