Phase change memory and manufacturing method thereof

A phase-change memory and phase-change memory technology, which is applied to semiconductor devices, electric solid-state devices, electrical components, etc., can solve problems such as serious crosstalk and lower reliability of phase-change memory

Active Publication Date: 2020-10-23
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] As the integration level of phase change memory increases, the problem of crosstalk between adj

Method used

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  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof

Examples

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example 1

[0191] Figures 7a to 7k It is a manufacturing method of a phase change memory according to an exemplary embodiment. refer to Figures 7a to 7k , the method includes the following steps:

[0192] Step 1: Refer to Figure 7a As shown, a first conductive material layer 1110 and a memory stack structure are formed on the surface of the substrate 1001, and a first mask layer 1271 covering the memory stack structure is formed; wherein, the memory stack structure includes: tunnel potentials stacked sequentially from bottom to top Barrier material layer 1211, first electrode material layer 1221, gate material layer 1231, second electrode material layer 1241, phase change memory material layer 1251 and third electrode material layer 1261; first electrode material layer 1221 for blocking tunneling Diffusion between the barrier material layer 1211 and the gate material layer 1231 .

[0193] The constituent material of the first conductive material layer includes a conductive materia...

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Abstract

The embodiment of the invention discloses a phase change memory and a manufacturing method of the phase change memory. The phase change memory comprises a first conductive wire, a phase change memoryunit and a second conductive wire which are sequentially stacked from bottom to top, wherein the first conductive wire and the second conductive wire are parallel to the same plane and are perpendicular to each other; the phase change memory unit is perpendicular to the first conductive wire and the second conductive wire; and the phase change memory unit comprises a tunnel barrier layer, a firstelectrode layer, a gating layer, a second electrode layer, a phase change memory layer and a third electrode layer which are sequentially stacked from bottom to top, wherein the first electrode layeris used for blocking diffusion between the tunnel barrier layer and the gating layer; and the tunnel barrier layer has an on state and an off state, wherein the tunnel barrier layer in the on state isconductive, and the tunnel barrier layer in the off state is electrically insulated.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a phase change memory and a method for fabricating a phase change memory. Background technique [0002] As a new non-volatile memory device, phase change memory has great advantages over flash memory in many aspects, such as read and write speed, read and write times, data retention time, cell area, and multi-value realization. [0003] As the integration level of the phase change memory increases, the problem of crosstalk between adjacent memory cells becomes more and more serious, which reduces the reliability of the phase change memory. SUMMARY OF THE INVENTION [0004] In view of this, embodiments of the present disclosure provide a phase change memory and a method for fabricating a phase change memory. [0005] According to a first aspect of the embodiments of the present disclosure, there is provided a phase change memory, including: ...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/80H10N70/801H10N70/231H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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