Phase-change memory and manufacturing method of phase-change memory

A phase-change memory and phase-change memory technology, which is applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve problems such as serious crosstalk problems and reduce the reliability of phase-change memory, so as to ensure functional stability and improve reliability. , to ensure the effect of structural integrity

Active Publication Date: 2020-11-27
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As the integration level of phase change memory increases, the problem of crosstalk between adjacent memory cells becomes more and more serious, which reduces the reliability of phase change memory

Method used

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  • Phase-change memory and manufacturing method of phase-change memory
  • Phase-change memory and manufacturing method of phase-change memory
  • Phase-change memory and manufacturing method of phase-change memory

Examples

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example 1

[0191] Figure 7a to Figure 7k It is a manufacturing method of a phase change memory shown according to an exemplary embodiment. refer to Figure 7a to Figure 7k , the method includes the following steps:

[0192] Step 1: Refer to Figure 7a As shown, a first conductive material layer 1110 and a storage stack structure are formed on the surface of the substrate 1001, and a first mask layer 1271 covering the storage stack structure is formed; wherein, the storage stack structure includes: tunnel potential stacked sequentially from bottom to top Barrier material layer 1211, first electrode material layer 1221, gate material layer 1231, second electrode material layer 1241, phase change memory material layer 1251, and third electrode material layer 1261; first electrode material layer 1221, used to block the tunnel Diffusion between barrier material layer 1211 and gate material layer 1231 .

[0193] The constituent material of the first conductive material layer includes a co...

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PUM

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Abstract

The embodiment of the present disclosure discloses a phase-change memory and a method for manufacturing the phase-change memory. The phase-change memory includes: a first conductive wire, a phase-change memory unit, and a second conductive wire that are sequentially stacked from bottom to top; wherein, The first conductive line and the second conductive line are parallel to the same plane and perpendicular to each other; the phase change memory unit is perpendicular to the first conductive line and the second conductive line; the phase change memory unit includes: The tunnel barrier layer, the first electrode layer, the gate layer, the second electrode layer, the phase change storage layer and the third electrode layer are stacked in sequence on top; wherein, the first electrode layer is used to block the tunnel potential Diffusion between the barrier layer and the gate layer; the tunnel barrier layer has an on state and an off state; wherein the tunnel barrier layer in the on state conducts electricity, and the tunnel barrier layer in the off state The tunnel barrier layer is electrically insulating.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a phase-change memory and a manufacturing method of the phase-change memory. Background technique [0002] As a new non-volatile memory device, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, cell area, and multi-value realization. [0003] As the integration level of the phase-change memory increases, the problem of crosstalk between adjacent memory cells becomes more and more serious, which reduces the reliability of the phase-change memory. Contents of the invention [0004] In view of this, embodiments of the present disclosure provide a phase change memory and a method for manufacturing the phase change memory. [0005] According to a first aspect of an embodiment of the present disclosure, a phase change memory is provided, including: ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/80H10N70/801H10N70/231H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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