Gallium nitride high-mobility transistor and preparation method thereof

Abstract

The invention discloses a gallium nitride high-mobility transistor and a preparation method thereof. The gallium nitride high-mobility transistor structurally comprises a substrate; a multi-layer semiconductor layer positioned on the substrate; a source electrode and a drain electrode located on the multi-layer semiconductor layer, and the grid electrode being located between the source electrode and the drain electrode; a first compensation layer located on the semiconductor layer between the source electrode and the grid electrode, and a second compensation layer located on the semiconductor layer between the grid electrode and the drain electrode. Compared with the prior art, by adding one compensation layer, the drain end depletion phenomenon is eliminated, and the working frequency of the device is improved.

Description

technical field [0001] The invention relates to the technical field of transistor preparation, in particular to a gallium nitride high-mobility transistor and a preparation method thereof. Background technique [0002] GaN high-mobility transistors are suitable for high-power communications, but with the increase in communication frequency, the operating frequency of GaN high-mobility transistors is also required to increase. The most effective way to increase the operating frequency of GaN high mobility transistors is to reduce the gate length. As the gate length decreases, the vertical electric field component from the drain to the gate becomes larger and larger, which causes the two-dimensional electron gas between the gate and the drain to be depleted, called the drain terminal Depletion, so that when electrons flow from source to drain, they will pass through an additional depletion region, which increases the time for electrons to go from source to drain, and will gre...

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