Preparation device and preparation method of high-tap-density ternary precursor material

A technology for preparing devices and precursors, which is applied in chemical instruments and methods, electrical components, inorganic chemistry, etc., can solve the problems of reducing the effective volume of reactors, promote orderly assembly, improve stability and energy density, and improve shear cut distribution effect

CN113896251APending Publication Date: 2022-01-07JINGMEN GEM NEW MATERIAL
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2022-01-07

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Abstract

The invention discloses a preparation device of a high-tap-density ternary precursor material, which comprises a seed crystal reaction kettle (1), a thickener (7) and a seed crystal tank (8), the seed crystal reaction kettle is respectively connected with the thickener and the seed crystal tank, and a pipeline connected between the seed crystal reaction kettle and the seed crystal tank is connected with the thickener; a stirrer (2) and a baffle (5) are arranged in the seed crystal reaction kettle, and a guide cylinder (3) is arranged on the inner wall of the seed crystal reaction kettle (1). The preparation method comprises the following steps: preparing a mixed sulfate solution of nickel, cobalt and manganese; preparing a base solution and introducing protective gas; adding a mixed sulfate solution, industrial liquid alkali and ammonia water to the height of an upper-layer paddle, and starting a stirrer; extracting supernate by the thickener, returning the supernate to the seed crystal reaction kettle, and overflowing the supernate to the seed crystal tank; and introducing seed crystal particles into the seed crystal reaction kettle for continuous reaction to obtain a material with a target particle size, and treating the material to obtain the high-tap-density ternary precursor material. The prepared material is high in tap density and good in particle uniformity.
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Description

technical field

[0001] The invention belongs to the technical field of lithium ion batteries, and in particular relates to a preparation device and a preparation method of a high-tap ternary precursor material. Background technique

[0002] As a new secondary clean and renewable energy, lithium-ion battery has the advantages of high energy, high voltage, fast charge and discharge, etc. It is widely used in electric tools, mobile phones, digital cameras, notebook computers, instruments and meters, etc. , lithium-ion batteries have great potential in the electric vehicle industry and have shown a strong development trend. Among them, as the key material of lithium-ion batteries, the positive electrode material directly affects the performance of lithium-ion batteries, and the cost accounts for more than 40%. The positive electrode material has a large proportion in lithium-ion batteries. Lithium-ion battery cathode materials mainly include lithium cobaltate, lithium iron phos...

Examples

preparation example Construction

[0023] A preparation method for a preparation device of a high-tap ternary precursor material, comprising the following steps:

[0024] Step (1): prepare a mixed salt solution of nickel sulfate, cobalt sulfate, and manganese sulfate; the molar ratio of nickel ion, cobalt ion, and manganese ion in the mixed salt solution is x:y:(100-x-y), wherein, 60≤x ≤98, 0≤y≤20, the sum of the concentration of nickel ions, cobalt ions and manganese ions in the mixed salt solution is 1mol / L-3mol / L; the industrial concentration of 8mol / L-12mol / L is used Liquid caustic soda is used as the precipitant solution, and ammonia water with a concentration of 0.5mol / L-2mol / L is used as the complexing agent solution.

[0025] Step (2): Prepare the bottom liquid in the seed crystal reactor 1, and pass protective gas into the seed crystal reactor 1; the bottom liquid is prepared from a precipitant solution and a complexing agent solution, and the pH of the bottom liquid is 11-12.5 , the concentration of ...

Embodiment 1

[0030] Prepare the mixed salt solution of nickel sulfate, cobalt sulfate, manganese sulfate; the mol ratio of nickel ion, cobalt ion, manganese ion in the mixed salt solution is 8:1:1, the concentration of nickel ion, the concentration of cobalt ion in the mixed salt solution, The sum of the concentrations of manganese ions is 2mol / L; industrial liquid caustic soda with a concentration of 8mol / L is used as the precipitant solution, and ammonia water with a concentration of 1mol / L is used as the complexing agent solution.

[0031] Prepare the bottom liquid in the seed crystal reactor 1, and pass protective gas into the seed crystal reactor 1; The concentration is 5g / L-10g / L, and the bottom liquid temperature is 40°C-50°C.

[0032] Add the mixed salt solution at a flow rate of 600L / h, the precipitant solution at a flow rate of 110L / h-120L / h, and the complexing agent solution at a flow rate of 45L / h-50L / h into the upper paddle in the seed crystal reactor 1 The co-precipitation r...

Embodiment 2

[0037] Prepare the mixed salt solution of nickel sulfate, cobalt sulfate, manganese sulfate; the mol ratio of nickel ion, cobalt ion, manganese ion in the mixed salt solution is 88:6:6, the concentration of nickel ion, the concentration of cobalt ion in the mixed salt solution, The sum of the concentrations of manganese ions is 2mol / L; industrial liquid caustic soda with a concentration of 8mol / L is used as the precipitant solution, and ammonia water with a concentration of 1mol / L is used as the complexing agent solution.

[0038] The bottom liquid is prepared in the seed crystal reactor 1, and a protective gas is introduced into the seed crystal reactor 1; the bottom liquid is prepared from a precipitant solution and a complexing agent solution, and the pH of the bottom liquid is 11.2-11.8, and ammonia water in the bottom liquid The concentration is 8g / L-13g / L, and the bottom liquid temperature is 45°C-55°C.

[0039] Add the mixed salt solution at a flow rate of 500L / h, the p...