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Semiconductor structure and forming method thereof

A technology of semiconductor and conductive structure, applied in the field of semiconductor structure and its formation, can solve the problem that the performance and reliability of the semiconductor structure need to be improved, etc.

Pending Publication Date: 2022-06-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the performance and reliability of existing semiconductor structures still need to be improved

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0041] As mentioned in the background, the performance and reliability of existing semiconductor structures still need to be improved.

[0042] The reasons why the performance and reliability of the semiconductor structure still need to be improved will be described in detail below with reference to the accompanying drawings.

[0043] Figure 1 to Figure 3 It is a schematic structural diagram of each step of a method for forming a semiconductor structure.

[0044] Please refer to figure 1 , providing a base 100, the base 100 includes a substrate (not shown) and a plurality of fin structures (not shown) that are separated from each other on the substrate; a first dielectric layer (not shown) is formed on the surface of the base 100 shown), the first dielectric layer covers part of the sidewall surface of the fin structure.

[0045] Please continue to refer to figure 1 , a second dielectric layer 110 is formed on the surface of the first dielectric layer, the second dielect...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate; forming a plurality of source and drain structures in the substrate; forming a first dielectric layer on the surfaces of the substrate and the plurality of source and drain structures; forming a first conductive structure located on the surface of the source-drain structure in the first dielectric layer; after the first conductive structure is formed, forming a sacrificial layer on the top surface of the first conductive structure by adopting a selective film forming process; after the sacrificial layer is formed, a second dielectric layer is formed on the surface of the first dielectric layer, and the sacrificial layer and the second dielectric layer are made of different materials. Therefore, the performance and the reliability of the formed semiconductor structure are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a method for forming the same. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in the integrated circuit is continuously reduced, so that the operation speed of the entire integrated circuit can be effectively improved. As the size of components is required to be smaller and smaller, correspondingly, the size of the conductive structures formed to be connected to the semiconductor device is smaller and smaller. [0003] However, the performance and reliability of existing semiconductor structures still need to be improved. SUMMARY OF THE INVENTION [0004] The technical problem solved by the present invention is to provide a semiconductor structure and a method for forming the same, so as to improve the performance and reliability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/768H01L21/336
CPCH01L21/76831H01L21/76879H01L29/66803H01L29/785
Inventor 郑二虎
Owner SEMICON MFG INT (SHANGHAI) CORP
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