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Semiconductor device manufacturing method, and semiconductor device

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the method of using metal for the gate electrode that has not been proposed

Inactive Publication Date: 2014-02-12
UNISANTIS ELECTRONICS SINGAPORE PTE LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, no method has been proposed for using metal for the gate electrode

Method used

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  • Semiconductor device manufacturing method, and semiconductor device
  • Semiconductor device manufacturing method, and semiconductor device
  • Semiconductor device manufacturing method, and semiconductor device

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Embodiment Construction

[0113] Below, refer to figure 2 (A), figure 2 (B), figure 2 (C)~ Figure 40 (A), Figure 40 (B), Figure 40 (C) The manufacturing steps of the semiconductor device having the SGT structure according to the embodiment of the present invention will be described.

[0114] Hereinafter, the first step is shown, that is, forming a planar silicon layer 107 on the silicon substrate 101 , and forming the first columnar silicon layer 104 and the second columnar silicon layer 105 on the planar silicon layer 107 .

[0115] First, if figure 2 (A), figure 2 (B), figure 2 As shown in (C), the first resists 102 and 103 are formed on the silicon substrate 101 for forming the first columnar silicon layer 104 and the second columnar silicon layer 105 .

[0116] Then, if image 3 (A), image 3 (B), image 3 As shown in (C), the silicon substrate 101 is etched to form the first columnar silicon layer 104 and the second columnar silicon layer 105 . Preferably, the heights of the f...

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Abstract

A semiconductor device manufacturing method comprises: a first step in which a planar silicon layer is formed, and a first columnar silicon layer and a second columnar silicon layer are formed on the planar silicon layer; a second step in which a gate insulating film is formed on the perimeter of the first columnar silicon layer and the second columnar silicon layer, a metal film and a polysilicon film are formed on the perimeter of the gate insulating film, said polysilicon film having the film thickness less than half the interval between the first columnar silicon layer and the second columnar silicon layer, a third resist for forming gate wiring is formed, and the gate wiring is formed; and a third step in which a fourth resist is deposited, the polysilicon film on the upper side walls of the first columnar silicon layer and the second columnar silicon layer are exposed, the exposed polysilicon films are removed by etching, the fourth resist is removed, the metal film is removed by etching, and a first gate electrode and a second gate electrode, which are connected to the gate wiring, are formed.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device and the semiconductor device. Background technique [0002] Semiconductor integrated circuits, especially integrated circuits using metal oxide semiconductor (Metal Oxide Semiconductor, MOS) transistors (transistors), are tending toward high integration. With this high integration, MOS transistors have been miniaturized down to the nanometer range. As the miniaturization of such MOS transistors progresses, there is a problem that it becomes difficult to suppress leakage (leak) current, and the occupied area of ​​the circuit cannot be easily reduced due to the need to secure a necessary amount of current. In order to solve such a problem, a Surrounding Gate Transistor (hereinafter referred to as "SGT") has been proposed, which adopts a structure in which a source (source), a gate ( gate), drain (drain), and the gate electrode surrounds the columnar semiconductor layer (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/7827H01L29/66666H01L29/78H01L29/42356H01L29/401
Inventor 舛冈富士雄原田望中村広记李翔王新朋陈智贤阿席特·拉玛昌德拉·卡玛斯拿伐布·星
Owner UNISANTIS ELECTRONICS SINGAPORE PTE LTD
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