Semiconductor chip and stacked semiconductor package having the same
a semiconductor chip and stacking technology, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of electrical characteristics deterioration, speed decrease, and difference in operation speed between semiconductor chips comprising stacks, so as to reduce parasitic capacitance
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first embodiment
[0036]FIG. 1 is a cross-sectional view illustrating a semiconductor chip in accordance with the present invention.
[0037]Referring to FIG. 1, a semiconductor chip 10A in accordance with a first embodiment of the present invention includes a substrate 100, through-electrodes 200, and a dielectric layer 300 with a dielectric constant decreasing structure.
[0038]The substrate 100 has a first surface 110, a second surface 120 and a circuit unit 130.
[0039]The first surface 110 faces away from the second surface 120, and the circuit unit 130 is formed on the first surface 110. The circuit unit 130 includes, for example, elements such as transistors, capacitors and resistors, to store and process data.
[0040]The through-electrodes 200 pass through the first surface 110 and the second surface 120 of the substrate 100. Each through-electrode 200 may have a circular sectional shape when viewed from the top. Each through-electrode 200 may also have an elliptical, quadrangular or pentagonal sectio...
second embodiment
[0046]FIG. 2 is a cross-sectional view illustrating a semiconductor chip in accordance with the present invention.
[0047]A semiconductor chip 10B in accordance with a second embodiment of the present invention has a construction in which the form of the dielectric layer 300 with a dielectric constant decreasing structure differs from the form of the dielectric layer 300 of the semiconductor chip 10A of the first embodiment described with reference to FIG. 1. Otherwise, the semiconductor chip in accordance with the second embodiment of the present invention has substantially the same construction as the semiconductor chip 10A in accordance with the first embodiment except for the dielectric layer 300 with a dielectric constant decreasing structure. Therefore, repeated descriptions of the same component parts will be omitted herein, and the same terms and the same reference numerals will be used to refer to the same component parts.
[0048]Referring to FIG. 2, in the present embodiment, ...
third embodiment
[0050]FIG. 3 is a cross-sectional view illustrating a semiconductor chip in accordance with the present invention.
[0051]A semiconductor chip 10C in accordance with a third embodiment of the present invention has a construction in which the structure of the dielectric layer 300 with a dielectric constant decreasing structure differs from the form of the dielectric layer 300 of the semiconductor chip 10A of the first embodiment described above with reference to FIG. 1. Hence, the semiconductor chip in accordance with the third embodiment of the present invention has substantially the same construction as the semiconductor chip 10A in accordance with the first embodiment except for the dielectric layer 300 with a dielectric constant decreasing structure. Therefore, repeated descriptions for the same component parts will be omitted herein, and the same terms and the same reference numerals will be used to refer to the same component parts.
[0052]Referring to FIG. 3, in the present embodi...
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