Semiconductor-on-diamond devices and associated methods

a technology of semiconductors and diamonds, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical apparatus, etc., can solve the problems of increasing the speed and size of electronic circuits, affecting the cooling effect of such devices, and various thermal problems, so as to improve the thermal properties and methods of making.

Inactive Publication Date: 2013-08-08
SUNG CHIEN MIN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach effectively accelerates heat transfer away from semiconductor layers, reducing trapped heat and allowing for higher power operation in devices like LEDs while maintaining a small form factor, and improves thermal properties beyond cooling, enhancing overall device performance.

Problems solved by technology

As electronic circuitry increases in speed and decreases in size, cooling of such devices becomes problematic.
As it builds, heat can cause various thermal problems associated with such electronic components.
Significant amounts of heat can affect the reliability of an electronic device, or even cause it to fail by, for example, causing burn out or shorting both within the electronic components themselves and across the surface of the printed circuit board.
Thus, the buildup of heat can ultimately affect the functional life of the electronic device.
This is particularly problematic for electronic components with high power and high current demands, as well as for the printed circuit boards that support them.
As increased speed and power consumption cause increasing heat buildup, such cooling devices generally must increase in size to be effective and may also require power to operate.
The demand for smaller electronic devices, however, not only precludes increasing the size of such cooling devices, but may also require a significant size decrease.

Method used

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  • Semiconductor-on-diamond devices and associated methods
  • Semiconductor-on-diamond devices and associated methods
  • Semiconductor-on-diamond devices and associated methods

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0065]A GaN LED crystal is formed on a sapphire substrate. An adynamic diamond film is coated on top of the GaN layer. The adynamic diamond film is deposited by microwave enhanced plasma CVD with methane (1%) and hydrogen (99%) as the gas mixture (100 torr). The adynamic diamond film is then sputter coated with Cr as a reflector and brazed to a silicon support substrate. With such an LED, light generated in the GaN layer is emitted primarily through the sapphire substrate.

example 2

[0066]An adynamic diamond layer is deposited onto a Si wafer as described in Example 1. The adynamic layer is polished to a smooth surface. A thin layer of Si is sputtered onto the adynamic layer. A GaN LED crystal formed on a sapphire substrate is wafer bonded to the thin layer of Si. Light generated in the GaN layer is thus emitted primarily through the sapphire substrate.

example 3

[0067]An adynamic diamond layer is deposited onto a Si wafer as described in Example 1. The adynamic layer is polished to a smooth surface. A thin layer of Si is sputtered onto the adynamic layer. A GaN LED crystal formed on a sapphire substrate is wafer bonded to the thin layer of Si using a gold-tin alloy to form a reflector to more effectively direct light generated in the GaN layer through the sapphire substrate.

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Abstract

Semiconductor-on-diamond devices and methods for making such devices are provided. One such method may include depositing a semiconductor layer on a semiconductor substrate, depositing an adynamic diamond layer on the semiconductor layer opposite the semiconductor substrate, and coupling a support substrate to the adynamic diamond layer opposite the semiconductor layer to support the adynamic layer.

Description

PRIORITY DATA[0001]This application is a continuation of U.S. patent application Ser. No. 11 / 584,258, filed on Oct. 20, 2006, now issued as U.S. Pat. No. 8,236,594, which is incorporated herein by reference.FIELD OF THE INVENTION[0002]The present invention relates generally to methods and associated devices having semiconductor-on-diamond layers. Accordingly, the present invention involves the electrical and material science fields.BACKGROUND OF THE INVENTION[0003]In many developed countries, major portions of the populations consider electronic devices to be integral to their lives. Such increasing use and dependence has generated a demand for electronics devices that are smaller and faster. As electronic circuitry increases in speed and decreases in size, cooling of such devices becomes problematic.[0004]Electronic devices generally contain printed circuit boards having integrally connected electronic components that allow the overall functionality of the device. These electronic ...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L33/30H01L33/00H01L33/64
CPCH01L21/0237H01L21/02444H01L21/02527H01L33/30H01L21/3146H01L33/0079H01L33/641H01L21/02595H01L33/0093H01L21/2007H01L21/043H01L21/185H01L21/02115
InventorSUNG, CHIEN-MIN
OwnerSUNG CHIEN MIN