Plasma processing apparatus and method of manufacturing semiconductor device

a processing apparatus and semiconductor technology, applied in liquid surface applicators, electric discharge tubes, coatings, etc., can solve the problems of affecting the processing efficiency of semiconductor devices, etc., to achieve the effect of reducing product yield, reducing productivity, and easy to increase the withstanding voltag

Active Publication Date: 2015-04-21
TOKYO ELECTRON LTD
View PDF14 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration effectively prevents discharges between the semiconductor wafer and the lower electrode, enhancing yield and productivity by maintaining a stable pressure environment and reducing potential differences.

Problems solved by technology

Accordingly, a potential difference of up to about 4000 V may be generated between the semiconductor wafer and the base material of the lower electrode, a discharge (arcing) may occur between the semiconductor wafer, and the base material of the lower electrode or a peripheral structure of the base material, and a semiconductor chip formed on the semiconductor wafer may be damaged.
Once the semiconductor chip formed on the semiconductor wafer is damaged, product yield is reduced and productivity is reduced.
The afore-described discharge may be prevented by increasing a withstanding voltage between the semiconductor wafer, and the base material of the lower electrode or the like to, for example, about 5000 V. However, since, for example, through-holes in which lifter pins for lifting the semiconductor wafer are disposed or gas supply holes through which a helium gas or the like for transferring heat between a rear surface of the semiconductor wafer and a surface of the electrostatic chuck, and the like are formed in the lower electrode, it is not easy to increase the withstanding voltage.
In particular, a pressure in the through-holes in which the lifter pins are disposed is changed, for example, when a helium gas for cooling is introduced into the through-holes, thereby increasing the risk that a discharge occurs according to Paschen's Law.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing apparatus and method of manufacturing semiconductor device
  • Plasma processing apparatus and method of manufacturing semiconductor device
  • Plasma processing apparatus and method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

second embodiment

[0060]In the second embodiment, in a state where the lifter pins 310 for focus ring are lowered, top portions 310a of the lifter pins 310 for focus ring are set to contact a lower surface of the focus ring 5. Then, the focus ring 5 is electrically connected to the base material 2a of the holding stage 2 with the lifter pins 310 for focus ring and a resistance element 301 that is a current control element therebetween. A resistance value of the resistance element 301 is set so that a resistance to a direct current (DC) of a total circuit by which the focus ring 5 is connected to the base material 2a of the holding stage 2 may range from, for example, 20 MΩ to 200 MΩ.

[0061]A diameter of a portion of each of the lifter pins 310 for focus ring contacting the focus ring 5 and electrically connected to the focus ring 5 is much smaller compared to the semiconductor wafer W having a diameter of 300 mm or the focus ring 5 disposed along an outer circumference of the semiconductor wafer W. Th...

third embodiment

[0067]FIG. 4 shows a configuration using a Zener diode 302 instead of the resistance element 301 as a current control element according to the present invention. If the Zener diode 302 is used, when a potential difference between the focus ring 5 and the base material 2a of the holding stage 2 gets equal to or higher than a predetermined level, a current flows through the Zener diode 302 and thus a potential difference between the focus ring 5 and the base material 2a of the holding stage 2 can be controlled to a predetermined value (for example, about 500 V). Also, even when the Zener diode 302 is used, a resistance element needs to be connected in series to the Zener diode 302 according to a capacity of the Zener diode 302.

[0068]As such, if a potential difference between the focus ring 5 and the base material 2a of the holding stage 2 can be controlled to a predetermined value, a discharge can be prevented from occurring between the semiconductor wafer W, and the base material 2a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
resistanceaaaaaaaaaa
bias voltageaaaaaaaaaa
voltageaaaaaaaaaa
Login to View More

Abstract

A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base material, and can improve yield and productivity. The plasma processing apparatus includes a processing chamber, a lower electrode, an upper electrode, and a plurality of lifter pins for supporting a substrate to be processed. Each of the lifter pins includes a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part. The lower electrode includes through-holes for lifter pins each of which includes a pin body receiving part, which has an inner diameter less than the outer diameter of the lid part and receives the pin body part, and a lid receiving part, which is formed in an upper portion of the pin body receiving part and receives the cover portion, and in which the lifter pins are disposed. In a state where the lifter pins are lowered, the lid part is received in the lid receiving part, and the upper portion of the pin body receiving part is blocked by the lid part.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS[0001]This application claims the benefit of Japanese Patent Application No. 2010-109958, filed on May 12, 2010, in the Japan Patent Office and U.S. patent application No. 61 / 348,545, filed on May 26, 2010, in U.S. Patent and Trademark Office, the disclosures of which are incorporated herein in their entireties by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a plasma processing apparatus and a method of manufacturing a semiconductor device.[0004]2. Description of the Related Art[0005]Conventionally, in a process of manufacturing a semiconductor device, an apparatus for performing various processes, for example, etching or film forming, on a substrate (for example, a semiconductor wafer) disposed on a holding stage in a processing chamber is used. Also, it is known that the apparatus is provided with a plurality of lifter pins that protrude from the holding stage and can move v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(United States)
IPC IPC(8): C23F1/00H01L21/306H01J37/32H01L21/687
CPCH01J37/32642H01J37/32568H01J37/32577H01J37/32715H01L21/68742H05H1/46H01L21/6833
InventorYAMAMOTO, TAKASHI
OwnerTOKYO ELECTRON LTD