Non-volatile memory comprising means for distorting the output of memory cells

a technology of non-volatile memory and output, which is applied in the direction of read-only memory, static storage, instruments, etc., can solve the problems of non-functional memory and interfere with the reading of functional memory cells

Active Publication Date: 2011-02-15
STMICROELECTRONICS FRANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach allows for immediate and effective distortion of data reading, making sensitive information inaccessible without actual data destruction, enhancing security by rendering data unreadable in unauthorized access attempts, and can be implemented in both EEPROM and Flash memory types.

Problems solved by technology

Thus, the non-functional memory cells are simultaneously selected and interfere with the reading of the functional memory cells.

Method used

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  • Non-volatile memory comprising means for distorting the output of memory cells
  • Non-volatile memory comprising means for distorting the output of memory cells
  • Non-volatile memory comprising means for distorting the output of memory cells

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Embodiment Construction

[0034]Below, “non-functional” shall designate memory cells which are not designed to store application data (user data) but which are designed to distort the reading of data in the memory array, and “functional”-shall designate the memory cells receiving application data.

[0035]FIG. 1 represents a non-volatile memory MEM1 of the EEPROM type (electrically erasable and programmable) in which the method of the present invention is implemented. The memory includes a memory array MA1, a word line address decoder WLDEC1 and a column decoder CDEC. The memory array MA1 includes functional memory cells CEi,j,k connected to functional word lines WLi and to bit lines BLj,k. The memory array is here of the type programmable by words of 8 bits (bytes), such that the bit lines are grouped together in columns COLk each including 8 bit lines BL0,k-BL7,k (j being an index ranging from 1 to 7 inside a column of rank k).

[0036]The memory array includes N functional word lines WL0-WLN-1 (i ranging from 0...

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Abstract

The present invention relates to a non-volatile memory comprising a memory array comprising functional memory cells and non-functional memory cells linked to at least one non-functional word line. A word line address decoder comprises a special decoding section linked to the non-functional word line, for selecting the non-functional word line when a functional word line is read-selected, such that non-functional memory cells are selected simultaneously with the functional memory cells, and distort the reading of the functional memory cells. Application particularly to integrated circuits for smart cards.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to non-volatile memories, particularly electrically erasable and programmable memories of the EEPROM and Flash type.[0003]2. Description of the Related Art[0004]The use of electrically erasable and programmable non-volatile memories has become widespread in recent years, and such memories can be found in many integrated circuits. In certain applications, it is sometimes desired for it to be possible to erase the content of a non-volatile memory in a very short space of time when an unexpected or prohibited event occurs. Thus, integrated circuits for smart cards are equipped with memories of the aforementioned type in which confidential information is stored such as cryptography codes, passwords, identification data, etc. When an unauthorized read attempt occurs, provision is made to rapidly destroy the confidential information.[0005]The destruction of the content of a non-volatile memory ge...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): G11C11/00G11C7/24G11C16/22G11C16/26
CPCG11C16/22G11C16/26
InventorLISART, MATHIEU
OwnerSTMICROELECTRONICS FRANCE