Hot compression chip low-temperature interconnection method using indium and micro needle cone structures

A thermal compression technology using indium, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult removal of flux residues, achieve low bonding residual stress, lower process temperature, and less defects such as interface micro-holes Effect

CN102543783BInactive Publication Date: 2015-06-24SHANGHAI JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2015-06-24
Estimated Expiration
Not applicable · inactive patent
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Abstract

The invention provides a hot compression chip low-temperature interconnection method using indium and micro needle cone structures, which includes stacking interconnection methods from chips to substrates and between chips and chips. A needle cone array layer of a metal indium thin layer is covered on the chip pad manufacture surface. The needle cone array layer is led to contact a substrate provided with second metal protruding points in a pressing mode and is later heated to above the indium melting point and maintained for some time. Utilizing the gap between a molten indium-filled needle cone and an inlaid second metal and solid-liquid reaction generated between the molten indium-filled needle cone and the second metal and producing high-melting-point intermetallic compounds, the indium layer is consumed to achieve close bonding. The hot compression chip low-temperature interconnection method using indium and micro needle cone structures is strong in universality, free of scaling powder, simple in technological process, and capable of obviously lowering process temperature of existing flip chip bonding.
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Description

technical field

[0001] The invention relates to the field of semiconductor chip packaging, in particular to a method for realizing solid-state interconnection and bonding between elements by thermally compressing a nickel needle cone layer with an indium layer on the surface and a second metal layer on the other side. Background technique

[0002] The micro-interconnection technology of semiconductor chip packaging is constantly innovating. The traditional fusion bonding technology is to control the temperature to make the metal at the bonding point melt and wet the two sides of the bonding point. After cooling, the bonding point solidifies, so as to obtain good welding. Such as reflow soldering. The reflow soldering process needs to increase the soldering temperature above the melting point of the second metal, and the high temperature environment will have a bad impact on some chips or substrates and reduce the reliability of the product. In order to achieve the desired b...

Examples

Embodiment Construction

[0034] Below in conjunction with specific embodiment the present invention is described in further detail:

[0035] The low-temperature interconnection method of thermally compressed chips using indium and microneedle cone structures disclosed by the present invention has the following steps:

[0036](1) Preparation of nickel microneedle cone layer: The metal block in the chip pad area was cleaned of surface contamination by chemical degreasing treatment for about 30-60 s, and then immersed in 20 wt.% sulfuric acid for about 10 s to improve surface activity. Electrodeposition is used to prepare nickel needle cones, and the electrolyte composition used is: NiCl 2 120 g / L, H 3 BO 3 40 g / L, crystal regulator 200 g / L. Electrodeposition conditions are: bath temperature 60°C, pH=4, current density 2.0 A / dm 2 , the deposition time is 12 min.

[0037] (2) Indium layer preparation: The chip that has completed the above step (1) is immediately prepared for the indium layer. The f...