Preparation method of silicon thin film surface antireflection structure

Abstract

The invention relates to a preparation method of a silicon thin film surface antireflection structure, and the method comprises the following steps of: 1, preparation of a silicon thin film: firstly sequentially packaging a silicon target with the purity of 99.9999%, a silver target with the purity of 99.999% and a cheap silicon wafer base into a vacuum chamber, then vacuumizing the vacuum chamber, then introducing argon into the vacuum chamber, and finally depositing a polycrystalline silicon thin film with the thickness of 0.3-5Mum on the base; 2, deposition of silver nano particles: continuously depositing silver nano particles on the polycrystalline silicon thin film obtained in the step one, wherein the thickness of the deposited silver nano particle layer is 2-20nm; 3, catalytic etching of precious metal silver nano particles; and 4, removal of the silver nano particles: soaking a black silicon thin film obtained in the step three with a salpeter solution with the mass fraction of 20-40% for 10-30 minutes at room temperature, so as to remove the silver nano particles reserved on the black silicon thin film, then washing with distilled water and ethyl alcohol successively, and drying with cold air. The silicon thin film surface antireflection structure disclosed by the invention is of a porous structure and has the characteristics of low cost, good antireflection effect and high stability.

Description

technical field

[0001] The invention belongs to the technical field of solar cells, and relates to a method for preparing a silicon thin film surface antireflection structure in a thin film solar cell structure. It specifically relates to the noble metal silver nano-particle catalytic etching process technology for the preparation process of the anti-reflection structure on the surface of the silicon film. Background technique

[0002] The first generation of silicon solar cells has reliable performance, durability, and high photoelectric conversion efficiency, but because about half of the cost comes from silicon wafer materials (thickness 200-250 microns), the cost of power generation is relatively high. Second-generation solar cells use cheap semiconductor thin films (typically 2-3 microns thick) deposited on low-cost substrates, and are less efficient than first-generation products. Since the second-generation technology reduces the cost of the active material, the fina...

Examples

Embodiment 1

[0013] 1. Silicon film preparation. The coating equipment adopts multi-target DC magnetron sputtering coating system. First, the silicon target with a purity of 99.9999%, the silver target with a purity of 99.999%, and a cheap silicon substrate are loaded into a vacuum chamber, and then the vacuum chamber is evacuated to 6.0×10 -4 Pa, and then argon gas with a purity of 99.999% is introduced into the vacuum chamber, and finally a polysilicon film with a thickness of about 0.5 microns is deposited on the substrate. The polysilicon thin film deposition process: the power of the silicon target is 50 watts, the bias voltage of the substrate is -80 volts, the distance between the silicon target and the substrate is 6 cm, the working pressure is 0.3 Pa, the temperature of the substrate is 500 degrees Celsius, and the rotation speed of the substrate is 10 turns.

[0014] 2. Deposition of silver nanoparticles. Continue to deposit silver nanoparticles on the polysilicon film finally...

Embodiment 2

[0018] 1. Silicon film preparation. The coating equipment adopts multi-target DC magnetron sputtering coating system. First, the silicon target with a purity of 99.9999%, the silver target with a purity of 99.999%, and a cheap silicon substrate are loaded into a vacuum chamber, and then the vacuum chamber is evacuated to 6.0×10 -4 Pa, and then argon gas with a purity of 99.999% is introduced into the vacuum chamber, and finally a polysilicon film with a thickness of about 1.5 microns is deposited on the substrate. The polysilicon thin film deposition process: the power of the silicon target is 80 watts, the bias voltage of the substrate is -120 volts, the distance between the silicon target and the substrate is 8 cm, the working pressure is 0.6 Pa, the temperature of the substrate is 550 degrees Celsius, and the rotation speed of the substrate is 17 turns.

[0019] 2. Deposition of silver nanoparticles. Continue to deposit silver nanoparticles on the polysilicon film finall...

Embodiment 3

[0023] 1. Silicon film preparation. The coating equipment adopts multi-target DC magnetron sputtering coating system. First, the silicon target with a purity of 99.9999%, the silver target with a purity of 99.999%, and a cheap silicon substrate are loaded into a vacuum chamber, and then the vacuum chamber is evacuated to 6.0×10 -4 Pa, and then argon gas with a purity of 99.999% is introduced into the vacuum chamber, and finally a polysilicon film with a thickness of about 3 microns is deposited on the substrate. The polysilicon thin film deposition process: the power of the silicon target is 120 watts, the bias voltage of the substrate is -160 volts, the distance between the silicon target and the substrate is 10 cm, the working pressure is 0.9 Pa, the temperature of the substrate is 650 degrees Celsius, and the rotation speed of the substrate is 25 turns.

[0024] 2. Deposition of silver nanoparticles. Continue to deposit silver nanoparticles on the polysilicon film finall...

technical field

[0001] The invention belongs to the technical field of solar cells, and relates to a method for preparing a silicon thin film surface antireflection structure in a thin film solar cell structure. It specifically relates to the noble metal silver nano-particle catalytic etching process technology for the preparation process of the anti-reflection structure on the surface of the silicon film. Background technique

[0002] The first generation of silicon solar cells has reliable performance, durability, and high photoelectric conversion efficiency, but because about half of the cost comes from silicon wafer materials (thickness 200-250 microns), the cost of power generation is relatively high. Second-generation solar cells use cheap semiconductor thin films (typically 2-3 microns thick) deposited on low-cost substrates, and are less efficient than first-generation products. Since the second-generation technology reduces the cost of the active material, the fina...

Examples

Embodiment 1

[0013] 1. Silicon film preparation. The coating equipment adopts multi-target DC magnetron sputtering coating system. First, the silicon target with a purity of 99.9999%, the silver target with a purity of 99.999%, and a cheap silicon substrate are loaded into a vacuum chamber, and then the vacuum chamber is evacuated to 6.0×10 -4 Pa, and then argon gas with a purity of 99.999% is introduced into the vacuum chamber, and finally a polysilicon film with a thickness of about 0.5 microns is deposited on the substrate. The polysilicon thin film deposition process: the power of the silicon target is 50 watts, the bias voltage of the substrate is -80 volts, the distance between the silicon target and the substrate is 6 cm, the working pressure is 0.3 Pa, the temperature of the substrate is 500 degrees Celsius, and the rotation speed of the substrate is 10 turns.

[0014] 2. Deposition of silver nanoparticles. Continue to deposit silver nanoparticles on the polysilicon film finally...

Embodiment 2

[0018] 1. Silicon film preparation. The coating equipment adopts multi-target DC magnetron sputtering coating system. First, the silicon target with a purity of 99.9999%, the silver target with a purity of 99.999%, and a cheap silicon substrate are loaded into a vacuum chamber, and then the vacuum chamber is evacuated to 6.0×10 -4 Pa, and then argon gas with a purity of 99.999% is introduced into the vacuum chamber, and finally a polysilicon film with a thickness of about 1.5 microns is deposited on the substrate. The polysilicon thin film deposition process: the power of the silicon target is 80 watts, the bias voltage of the substrate is -120 volts, the distance between the silicon target and the substrate is 8 cm, the working pressure is 0.6 Pa, the temperature of the substrate is 550 degrees Celsius, and the rotation speed of the substrate is 17 turns.

[0019] 2. Deposition of silver nanoparticles. Continue to deposit silver nanoparticles on the polysilicon film finall...

Embodiment 3

[0023] 1. Silicon film preparation. The coating equipment adopts multi-target DC magnetron sputtering coating system. First, the silicon target with a purity of 99.9999%, the silver target with a purity of 99.999%, and a cheap silicon substrate are loaded into a vacuum chamber, and then the vacuum chamber is evacuated to 6.0×10 -4 Pa, and then argon gas with a purity of 99.999% is introduced into the vacuum chamber, and finally a polysilicon film with a thickness of about 3 microns is deposited on the substrate. The polysilicon thin film deposition process: the power of the silicon target is 120 watts, the bias voltage of the substrate is -160 volts, the distance between the silicon target and the substrate is 10 cm, the working pressure is 0.9 Pa, the temperature of the substrate is 650 degrees Celsius, and the rotation speed of the substrate is 25 turns.

[0024] 2. Deposition of silver nanoparticles. Continue to deposit silver nanoparticles on the polysilicon film finall...