The utility model discloses a high-temperature-resistant shell structure for a SiC power device, which comprises a plastic frame, and three
AC power terminals are fixed at the bottom of the plastic frame through integral injection molding. According to the utility model, the plastic frame, the DC1 power terminal, the DC2 power terminal and the
AC power terminal are subjected to integrated injection molding, so that the phenomena of independent
assembly and terminal plugging hole position reservation are avoided, and a better integrated stable effect is achieved; the insulating layer prefabricated member made of PPA, PPS or insulating
ceramic materials is clamped, positioned, separated and insulated between the DC1 power terminal and the DC2 power terminal in advance, the high
temperature resistance and the insulating property are both superior to those of a traditional PBT plastic single material, the
junction temperature of the SiC power device can be remarkably increased, the electric leakage risk caused by aging of the insulating layer between the DC1 power terminal and the DC2 power terminal is reduced, and the service life of the SiC power device is prolonged. The insulation stability between the two is improved, and the requirements of long-term high-temperature-resistant service in different application scenes are met.