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Hybrid fully SOI-type multilayer structure

A multi-layer structure, intermediate structure technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc.

Inactive Publication Date: 2008-03-19
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0047] Therefore, this structure can only provide SOI NMOS transistor devices with crystal orientation (1,0,0) and bulk PMOS transistor devices with crystal orientation (1,1,0)

Method used

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  • Hybrid fully SOI-type multilayer structure
  • Hybrid fully SOI-type multilayer structure
  • Hybrid fully SOI-type multilayer structure

Examples

Experimental program
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Embodiment Construction

[0106] Referring now to FIG. 2 , starting from an intermediate structure 100 an SOI type multilayer structure 105 according to the invention is obtained.

[0107] The intermediate structure 100 includes a support layer 101 supporting an insulating layer 102 .

[0108] The insulating layer 102 extends between the supporting layer 101 and the working layer 103 .

[0109] The intermediate structure thus comprises support layers, insulating layers and working layers.

[0110] However, other layers may be formed in the structure, the main idea being that the intermediate structure comprises at least the above three layers.

[0111] To this end, it is noted that in the present invention, a working layer of an SOI-type structure is understood as a layer located above the insulating layer of the structure and in which a current channel can be formed.

[0112] In other words, the working layer can serve as a layer for carrier transport.

[0113] As a non-limiting example, in an NMOS...

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PUM

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Abstract

The invention proposes a SOI-type multilayer structure (105), comprising a support layer (101), at least two working layers (103, 104) having different crystalline orientations, an insulating layer (102) extending over at least a portion of said support layer (101), characterized in that said insulating layer (102) extends over the whole surface of said support layer (101), so as to extend between said support layer (101) and said working layers (103, 104). A process for manufacturing such a structure (105) is also provided.

Description

technical field [0001] The present invention relates to an SOI type multilayer structure. [0002] An SOI-type multilayer structure is a structure comprising a support layer, at least one working layer, and an electrically insulating layer between the working layer and the support layer. [0003] More specifically, the present invention relates to an SOI-type multilayer structure comprising at least two active layers having different crystallographic orientations. [0004] The invention also relates to a method for manufacturing the structure. Background technique [0005] An advantageous application of the described structure is the design and manufacture of high performance CMOS circuits. [0006] As an example, such high performance may lie in increasing the speed of NMOS and PMOS transistor devices for a given power consumption. [0007] This actually allows the construction of very complex circuits, such as million-gate logic circuits, whose performance in terms of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/762
CPCH01L21/2007H01L21/76254
Inventor 法布里斯·勒泰特卡洛斯·马祖拉
Owner SOITEC SA