Wafer cleaning apparatus

A wafer and cleaning technology, applied in cleaning methods and utensils, cleaning methods using liquids, electrical components, etc., can solve the problems of line collapse, structural damage of wafer surface feature size, disorder of mechanical vibration energy, etc., to eliminate damage, Improves chemical removal efficiency and reduces damage

Active Publication Date: 2015-05-27
BEIJING SEVENSTAR ELECTRONICS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, a wafer cleaning method using high-frequency acoustic energy of megasonic energy has been introduced. Although the device for cleaning semiconductor wafers by megasonic energy can effectively remove pollutants from the wafer surface, in the cleaning process, due to the presence of megasonic oscillators on the wafer The megasonic mechanical vibration energy generated on the surface is disordered, so that a bending moment is generated on the side wall of the characteristic size of the device, resulting in the collapse of the lines, so that the characteristic size structure of the wafer surface will be severely damaged, affecting the quality of the wafer cleaning Rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer cleaning apparatus
  • Wafer cleaning apparatus
  • Wafer cleaning apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0025] refer to Figure 1-4 , the device for cleaning wafers includes: a piezoelectric crystal vibrator 1, a chamber 2 for installing the piezoelectric crystal vibrator 1, and a transducer 5 fixedly connected to the piezoelectric crystal vibrator 1. The transducer 5 has several protrusions on its surface. There are several microholes 52 between the cylinders 51 , and the microholes 52 penetrate to the bottom of the transducer 5 . The piezoelectric crystal vibrator 1 is made of aluminum zirconate titanate after polarization treatment. When an AC voltage with a frequency in the range of 700K-2MHZ is applied to the piezoelectric crystal oscillator 1, the piezoelectric cryst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the semiconductor integrated circuit device cleaning technology field, especially relating to a wafer cleaning apparatus. The cleaning apparatus comprises a piezoelectric crystal oscillator, a cavity used for installing the piezoelectric crystal oscillator and an energy transducer which is in fixed connection with the piezoelectric crystal oscillator. A surface of the energy transducer has a plurality of raised cylinders, a plurality of micropores are provided among the cylinders, and the micropores penetrate to a bottom of the energy transducer. Through the energy transducer with the run-through micropores provided by the invention, by utilizing a megasonic physical transmission principle, acting force parallel to a wafer characteristic dimension sidewall is generated, no bending moment effect is generated to characteristic dimension, destroy of a wafer characteristic dimension structure is reduced and eliminated to the max, and chemical removing efficiency of residues is raised.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit device cleaning technology, in particular to a wafer cleaning device. Background technique [0002] As the feature size of integrated circuits enters the deep submicron stage, the requirements for the cleaning process in the manufacturing process of integrated circuit wafers are also getting higher and higher. In recent years, a wafer cleaning method using high-frequency acoustic energy of megasonic energy has been introduced. Although the device for cleaning semiconductor wafers by megasonic energy can effectively remove pollutants from the wafer surface, in the cleaning process, due to the presence of megasonic oscillators on the wafer The megasonic mechanical vibration energy generated on the surface is disordered, so that a bending moment is generated on the side wall of the characteristic size of the device, resulting in the collapse of the lines, so that the characte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/00B08B3/12H01L21/02
Inventor王锐廷吴仪
OwnerBEIJING SEVENSTAR ELECTRONICS CO LTD