Non-refrigerating thermocouple infrared detector and preparation method thereof

An infrared detector, non-cooling technology, applied in the direction of electric radiation detectors, circuits, electrical components, etc., can solve the problems of incompatibility with microelectronics technology, achieve simple and easy manufacturing process, improve device yield, and ensure structure stable effect

Inactive Publication Date: 2013-12-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] In view of this, the main purpose of the present invention is to provide a method for preparing an uncooled thermocouple infrared detector, to use the black silicon material to absorb infrared radiation close to a black body, to solve the problem of current high infrared radiation absorbing materials and microelectronics technology. Compatible issues, to further improve the sensitivity of uncooled thermocouple infrared detectors, and realize the purpose of large-scale integration of uncooled thermocouple infrared detection systems

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  • Non-refrigerating thermocouple infrared detector and preparation method thereof
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  • Non-refrigerating thermocouple infrared detector and preparation method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] The black silicon material has absorption characteristics close to black bodies to infrared radiation. The present invention utilizes this characteristic of the black silicon material, which has a large Seebeck coefficient with aluminum, gold or titanium, and can be compatible with the high Seebeck coefficient of the semiconductor process. Metal fabrication of thermocouple-based uncooled thermocouple infrared detectors.

[0034] figure 1 It is a structural schematic diagram of an uncooled thermocouple infrared detector according to an embodiment of the present invention. The uncooled thermocouple infrared detector includes from bottom to top: a silicon oxide thin layer formed by thermal oxidation on a silicon substra...

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Abstract

The invention discloses a non-refrigerating thermocouple infrared detector and a preparation method thereof. The non-refrigerating thermocouple infrared detector comprises a thin silicon oxide layer, a high-seebeck-coefficient metal layer, a heat-insulating layer with heat insulation function, a black silicon material layer with high infrared radiation absorption and a surface passivated layer, which are arranged in sequence from top to bottom, wherein the thin silicon oxide layer is formed on a silicon substrate through thermal oxidation, the high-seebeck-coefficient metal layer is deposited on the thin silicon oxide layer, aluminum, gold or titanium is applied to the high-seebeck-coefficient metal layer and serves as a clod end of the non-refrigerating thermocouple infrared detector, the heat-insulating layer comprises silicon oxide and silicon nitride which have a heat insulating characteristic or silicon oxide serves as a sacrifice layer to obtain a cavity, the silicon nitride is formed on the silicon oxide, the black silicon material layer with high infrared radiation absorption serves as a hot end of the non-refrigerating thermocouple infrared detector, and a silicon nitride layer serves as the surface passivated layer. According to the invention, the influence of infrared radiation on a cold end metal buried behind the heat insulating layer can be eliminated; therefore the sensitivity of the detector is improved further.

Description

technical field [0001] The invention relates to the technical field of uncooled thermocouple infrared detectors, in particular to an uncooled thermocouple infrared detector utilizing the strong infrared light absorption characteristics and light-to-heat conversion effect of black silicon materials and a preparation method thereof, in particular to an uncooled thermocouple infrared detector utilizing An uncooled thermocouple infrared detector for detecting mid-wave infrared and long-wave infrared radiation with a thermocouple composed of a black silicon material and a metal material with a high Seebeck coefficient (aluminum, gold, etc.) and a preparation method thereof. Background technique [0002] For a long time, using the Seebeck effect of different materials to prepare thermopile infrared detectors has been one of the research hotspots in the field of infrared detection and imaging. [1][2][3] , but so far there has not been a semiconductor material that is compatible wit...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G01J5/12H01L31/101H01L31/0352H01L31/18
CPCY02P70/50
Inventor李辛毅韩培德毛雪胡少旭王帅范玉杰
OwnerINST OF SEMICONDUCTORS - CHINESE ACAD OF SCI