Semiconductor laser for selecting mold by using total internal reflection polygonal resonant cavity

A technology of total internal reflection and resonant cavity, which is applied in the field of semiconductor lasers using the mode selection of a polygonal resonant cavity of total internal reflection, can solve problems such as complex process, high cost, and complex laser control, and achieve simple manufacturing process, reduced manufacturing cost, The effect that wavelength control is easy

Active Publication Date: 2013-03-13
SONT TECH (SHEN ZHEN) LTD +1
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Problems solved by technology

Of course, these mode-hop-free lasers based on DFB or DBR lasers need to make gratings, the process is quite complicated, and the cost is also high; and some designs are tuned by multi-electrode coordination, which also makes the control of the laser more complicated.

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  • Semiconductor laser for selecting mold by using total internal reflection polygonal resonant cavity
  • Semiconductor laser for selecting mold by using total internal reflection polygonal resonant cavity
  • Semiconductor laser for selecting mold by using total internal reflection polygonal resonant cavity

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0028] figure 2 It is the first embodiment of the semiconductor laser using the mode selection of the total internal reflection polygonal resonator in the present invention. The present invention comprises a triangular resonant cavity 1, an active FP resonant cavity 2 and a coupler 3; the three vertices of the triangular resonant cavity 1 are all deeply etched total internal reflection surfaces, and the first port 31 and the second port 32 of the coupler 3 are connected in series Connected in the base 11 of the triangular resonant cavity 1, the third port 33 and the fourth port 34 of the coupler 3 are connected in series in the active FP resonant cavity 2, and the triangular resonant cavity 1 is arranged on one side of the active FP resonant cavity 2 On the side, wavelength tuning regions are symmetrically arranged in both waists of the triangular res...

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Abstract

The invention discloses a semiconductor laser for selecting a mold by using a total internal reflection polygonal resonant cavity. The semiconductor laser comprises a polygonal resonant cavity, an active FP (Fabry-Perot) resonant cavity and a coupler, wherein the polygonal resonant cavity is coupled with the FP resonant cavity through the coupler. In the polygonal resonant cavity, steering of light waves at the top point of the polygonal resonant cavity through a total internal reflection principle is realized, so that a resonant loop is obtained; a shallow etching process is adopted for each edge of the polygonal resonant cavity and the FP resonant cavity, so that loss is reduced; and the polygonal resonant cavity serves as a filter and is coupled with FP resonant cavity for selecting the mode, so that single-mode work of the laser is realized. In the semiconductor laser, an optical grating is not required to be manufactured, and the structure is simple; and the design of the total internal reflection polygonal resonant cavity can be used for realizing a semiconductor laser of jumpless mode turning or digital tuning.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a semiconductor laser which utilizes total internal reflection polygonal cavity mode selection. Background technique [0002] Tunable semiconductor lasers have the advantages of compact structure, high integration, long life, and easy mass production, and have great application value in the fields of interferometry and optical communication. Among them, the tunable laser light source without mode hopping is especially important for interferometry. The jump of the light source mode in the measurement will have a great impact on the measurement accuracy of the detected quantity. For example, when measuring the distance, the mode hopping of the laser light source will be reduced. The spatial resolution of the measurement. For mode-hop-free tuning, when the lasing wavelength is tuned by a certain wavelength selection factor, the optical path length of the main resonator must be adjusted sync...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01S5/12
Inventor武林王磊郭山溧何建军
OwnerSONT TECH (SHEN ZHEN) LTD