Four-knot solar battery with two-knot germanium sub-batteries and preparation method thereof

A technology of solar cells and sub-cells, applied in the field of solar cells, can solve the problems of difficulty in obtaining ideal third-junction materials, mismatching currents of three-junction cells, and low solar spectrum utilization efficiency of four-junction cells, etc., so as to solve the problems of current mismatching , The preparation method is simple, and the effect of improving the open circuit voltage

Inactive Publication Date: 2012-11-21
XIAMEN UNIV
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[0005] The object of the present invention is to provide a kind of In

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  • Four-knot solar battery with two-knot germanium sub-batteries and preparation method thereof

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[0038] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0039] see figure 1 , the embodiment of the InGaP / InGaAs / Ge / Ge four-junction solar cell with two-junction germanium sub-cell includes a first-junction Ge sub-cell 1, a second-junction Ge sub-cell 3, a third-junction InGaAs sub-cell 5, and a third-junction Ge sub-cell 5. Quad junction InGaP subcell 7 and contact layer 8 . The first junction Ge subcell 1 is constructed on a Ge substrate, and the Ge substrate is used as the base region of the first junction Ge subcell 1 , and the second junction Ge subcell 3 and the first junction Ge subcell 1 are located between Connected by the first tunnel junction 2, the third junction InGaAs sub-cell 5 and the second junction Ge sub-cell 3 are connected by the second tunnel junction 4, the fourth junction InGaP sub-cell 7 and the third junction The InGaAs subcells 5 are connected by a third tunnel junction 6 , and the...

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Abstract

The invention provides a four-knot solar battery with two-knot germanium sub-batteries and a preparation method thereof and relates to a solar battery. The four-knot solar battery is provided with a first knot Ge sub-battery, a second knot Ge sub-battery, a third knot InGaAs sub-battery, a fourth knot InGaP sub-battery and a contact layer, wherein the first knot Ge sub-battery is constructed on a Ge substrate; the Ge substrate is served as a base region of the first knot Ge sub-battery; the second knot Ge sub-battery and the first knot Ge sub-battery are connected through a first tunneling knot; the third knot InGaAs sub-battery and the second knot Ge sub-battery are connected through a second tunneling knot; the fourth knot InGaP sub-battery and the third knot InGaAs sub-battery are connected through a third tunneling knot; and the contact layer is arranged on the fourth knot InGaP sub-battery. A Ge battery is divided into the two-knot germanium sub-batteries which are connected in series, so that the current matching and the lattice matching of the battery are realized, the problem of unmatched current is solved and the open-circuit voltage and the conversion efficiency of the battery are increased.

Description

technical field [0001] The invention relates to a solar cell, in particular to a four-junction solar cell with a two-junction germanium sub-cell and a preparation method thereof. Background technique [0002] Single-junction cells can only absorb sunlight of a specific spectrum, and their conversion efficiency is not high. Multi-junction tandem solar cells are composed of a variety of semiconductor materials with different forbidden band widths, which are arranged in order from wide to narrow and from top to bottom according to the forbidden band width of the materials. Improve the photoelectric conversion efficiency of solar cells. Theoretical calculations show that (under 6000K blackbody radiation): the limit efficiency of double-junction solar cells is 42.5%, the limit efficiency of triple-junction solar cells is 48.6%, and the limit efficiency of four-junction solar cells is 52.5% ([1]MartiA, Araujo G .Solar Energy Materials and Solar Cells, 1996, 43:2003). [0003] I...

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Application Information

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IPC IPC(8): H01L31/0687H01L31/18
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 陈松岩李欣刘蕊刘晶晶孙钦钦
Owner XIAMEN UNIV
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