Solar cell and diffusion method of solar cell

A diffusion method and a technology of a diffusion furnace, which are applied in the field of solar cells and can solve problems such as the need to improve the conversion efficiency of solar cells

Active Publication Date: 2015-05-20
YINGLI ENERGY CHINA
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Problems solved by technology

[0010] However, it is found in the actual production process that the conversion efficiency of the solar cells produced by the above-mentioned diffusion process still needs to be improved.

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  • Solar cell and diffusion method of solar cell

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Embodiment Construction

[0037] As mentioned in the background technology, the conversion efficiency of solar cells produced by the existing diffusion process is low. The inventors found that the reasons for this problem include the following points:

[0038] In order to meet the requirements of PN junction depth and impurity concentration distribution in the two-step diffusion in the prior art, phosphorus atoms larger than the solid solubility of phosphorus in silicon need to be deposited on the surface, so that the phosphorus impurity concentration on the surface of the silicon wafer is high, such as figure 2 The surface layer with a high concentration of phosphorus within 20nm~50nm from the surface has many defects, which will cause a large number of recombination of carriers in this layer, which is the so-called "dead layer". It is beneficial to the improvement of the conversion efficiency of the solar cell.

[0039] At the same time, phosphorus oxychloride reacted with oxygen will not only depos...

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Abstract

The invention discloses a solar cell and a diffusion method of the solar cell. The method comprises the steps that silicon wafers are placed in a diffusion furnace; the temperature in the diffusion furnace is increased to 750-800 DEG C, including terminal values; a source is fed to the diffusion furnace for phosphorus diffusion; the basic quantity of phosphorus being diffused to the silicon wafers is maximum solid solubility of the phosphorus in the silicon wafers at the current temperature in the diffusion furnace; the temperature in the diffusion furnace is increased to 810-820 DEG C, including the terminal values; the phosphorus is diffused to the interiors of the silicon wafers; the temperature in the diffusion furnace is increased to 840-850 DEG C, including the terminal values; the source is fed in the heating process for temperature changing diffusion; the increased temperature is kept; oxygen is fed for high temperature advancing till the diffusive quantity of the phosphorus in the silicon wafers reaches a target value; and after the interior of the diffusion furnace is cooled, the diffusion furnace is opened and the silicon wafers are taken out. According to a cell plate produced by the method, the concentration of a phosphorus impurity on the surface is low; the thickness of a dead layer is small; the distribution gradient of phosphorus concentration is large; and the conversion efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, more specifically, to a solar cell and a diffusion method thereof. Background technique [0002] In recent years, the production technology of solar cells has been continuously improved, the production cost has been continuously reduced, and the conversion efficiency has been continuously improved, making the application of photovoltaic power generation increasingly popular and developing rapidly, and gradually becoming an important source of power supply. Solar cells can convert light energy into electrical energy under sunlight irradiation to realize photovoltaic power generation. [0003] The production process of solar cells is relatively complicated. Simply put, the production process of solar cells mainly includes: texturing, diffusion, etching, coating, printing and sintering. Diffusion to make PN junction is the core of crystalline silicon solar cells and one of the keys to the quali...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B31/08C30B31/18
Inventor 范志东张小盼赵学玲李倩
Owner YINGLI ENERGY CHINA
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