Diffusion method for solace cell with polycrystalline silicon selective emitter

A technology of solar cells and diffusion methods, applied in the direction of diffusion/doping, chemical instruments and methods, circuits, etc., can solve problems such as complex processes and high costs, and achieve the effects of improving electrical performance and reliability, improving quality, and eliminating contamination

Active Publication Date: 2012-07-18
CSI CELLS CO LTD +1
View PDF5 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, at present, when preparing polysilicon selective emitter solar cells, gettering and diffusion are generally divided into two steps, so the process is more complicated and the cost is higher

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A diffusion method for a polysilicon selective emitter solar cell, comprising the steps of:

[0023] (1) Put the dopant-grown silicon wafer in a diffusion furnace, raise the temperature to 800°C, and the environment in the furnace is N 2 , N 2 Flow 15 slm;

[0024] (2) After the temperature is stabilized, the temperature of each temperature zone in the furnace is raised to 900°C, and at the same time the temperature is raised, the N 2 , the flow rate is 5slm O 2 and a flow rate of 5 slm N 2 Gas, the time is 40min;

[0025] (3) Lower each temperature zone to a diffusion temperature of 840°C, and introduce POCl 3 N 2 Diffusion is carried out, and the diffusion time is 18 min. The POCl-carrying 3 N 2 The flow rate is 1 slm, O 2 The flow rate is 0.8slm; N 2 The flow rate is 15slm;

[0026] (4) Stop accessing POCl 3 N 2 Promoting diffusion, reducing the temperature of each temperature zone to 800°C, the advancing time is 20 min, the O 2 The flow rate is 0.8slm,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a diffusion method for a solar cell with a polycrystalline silicon selective emitter. The diffusion method includes the following steps: firstly, placing a silicon chip on which a doping agent grows into a diffusion furnace and raising the temperature to 750-800DEG C, wherein the environment in the furnace is N2 with the flow being 10-30slm; secondly, after the temperature is stabilized, uniformly raising the temperature in each temperature zone in the furnace to 850-900DEG C, introducing 0.2-2slm of N2 carrying trichloroethane, 1-5slm of O2 and 10-30slm of N2 while raising the temperature so as to realize heavy doping and controlling the heavily-doped sheet resistance between 30 and 60 omega/m<2>; thirdly, reducing the temperature of each temperature zone to the diffusion temperature of 820-840DEG C and introducing N2 carrying POCl3 for diffusing; fourthly, reducing the temperature of each temperature zone to 780-800DEG C, stopping introducing the N2 carrying the POCl3 so as to realize shallow doping, wherein the propulsion time is 10-25minutes and controlling the shallow-doped sheet resistance between 70-120 omega/m<2>; and fifthly, cooling the silicon chip, taking out the silicon chip and finishing the diffusion process. According to the diffusion method disclosed by the invention, the diffusion of a doping agent is realized at high temperature and the heavy doping and shallow doping of the selective emitter are realized; and meanwhile, the gettering of a polycrystalline silicon is realized, so that the conversion efficiency is greatly increased.

Description

technical field [0001] The invention relates to a diffusion method for a polysilicon selective emitter solar cell, which belongs to the technical field of solar energy. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. At present, photovoltaic scientists have explored a variety of new battery technologies, metallization materials and structures to improve battery performance and increase their photoelectric conversion efficiency: surface and bulk passivation technology, Al / P gettering technology, selective emission region technology, dual Layer anti-reflection coating technology, etc. [0003] At present, selective emitter technology is also one o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B31/08
CPCY02P70/50
Inventor 张凤张为国龙维绪王栩生章灵军
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap