Diffusion method for solace cell with polycrystalline silicon selective emitter
A technology of solar cells and diffusion methods, applied in the direction of diffusion/doping, chemical instruments and methods, circuits, etc., can solve problems such as complex processes and high costs, and achieve the effects of improving electrical performance and reliability, improving quality, and eliminating contamination
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[0022] A diffusion method for a polysilicon selective emitter solar cell, comprising the steps of:
[0023] (1) Put the dopant-grown silicon wafer in a diffusion furnace, raise the temperature to 800°C, and the environment in the furnace is N 2 , N 2 Flow 15 slm;
[0024] (2) After the temperature is stabilized, the temperature of each temperature zone in the furnace is raised to 900°C, and at the same time the temperature is raised, the N 2 , the flow rate is 5slm O 2 and a flow rate of 5 slm N 2 Gas, the time is 40min;
[0025] (3) Lower each temperature zone to a diffusion temperature of 840°C, and introduce POCl 3 N 2 Diffusion is carried out, and the diffusion time is 18 min. The POCl-carrying 3 N 2 The flow rate is 1 slm, O 2 The flow rate is 0.8slm; N 2 The flow rate is 15slm;
[0026] (4) Stop accessing POCl 3 N 2 Promoting diffusion, reducing the temperature of each temperature zone to 800°C, the advancing time is 20 min, the O 2 The flow rate is 0.8slm,...
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