Thyristor-type diode chip

A diode and chip technology, applied in the field of thyristor diode chips, can solve the problems of device diffusion and complex photolithography process, small negative resistance characteristics, large trigger current, etc., and achieve low manufacturing cost, large negative resistance characteristics, and high trigger current small effect

Active Publication Date: 2013-03-13
ZHEJIANG MINGDE MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Bidirectional diode thyristors in the prior art such as figure 1 and figure 2 As shown, it includes a long base region 1-1, a short base region 1-2, a cathode emitter region 1-3 and an anode emitter region 1-4, and its cathode emitter junction 1-6 is a curved surface junction, because of its bidirectional symmetry characteristics, in There are short-circuit points or short-circuit rings 1-5 on each side. The existence of short-circuit points or short-circuit rings 1-5 makes the diffusion and photolithography process of the device relatively complicated. After the device breaks down, there are small negative resistance characteristics, slow switching speed, and trigger Defects such as high current

Method used

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  • Thyristor-type diode chip

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Such as Figure 3-5 As shown, a thyristor diode chip uses the conductive layer where the long base region 1 is located as the silicon substrate, diffuses on both surfaces of the silicon substrate to form an anode emitter region 2 and a short base region 3 respectively, and in the short base region 3 Diffusion on the other surface of the cathode emitter region 4 is formed; a first PN junction 11 is provided between the anode emitter region 2 and the long base region 1, and a second PN junction 12 is provided between the long base region 1 and the short base region 3, A third PN junction 31 is provided between the short base region 3 and the cathode emitter region 4 ; wherein, the first PN junction 11 , the second PN junction 12 and the third PN junction 31 are all planar junctions.

[0029] The thyristor diode chip is a mesa type, an anode boss 5 is formed at the end of the anode emitter region 2, a cathode boss 6 is formed at the end of the cathode emitter region 4, the...

Embodiment 2

[0035] Such as Figure 3-5 As shown, a thyristor diode chip uses the conductive layer where the long base region 1 is located as the silicon substrate, diffuses on both surfaces of the silicon substrate to form an anode emitter region 2 and a short base region 3 respectively, and in the short base region 3 Diffusion on the other surface of the cathode emitter region 4 is formed; a first PN junction 11 is provided between the anode emitter region 2 and the long base region 1, and a second PN junction 12 is provided between the long base region 1 and the short base region 3, A third PN junction 31 is provided between the short base region 3 and the cathode emitter region 4 ; wherein, the first PN junction 11 , the second PN junction 12 and the third PN junction 31 are all planar junctions.

[0036] The thyristor diode chip is a mesa type, an anode boss 5 is formed at the end of the anode emitter region 2, a cathode boss 6 is formed at the end of the cathode emitter region 4, the...

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Abstract

The invention discloses a thyristor-type diode chip, and belongs to the field of a semiconductor device. The thyristor-type diode chip comprises a long base area, an anode emitting area, a short base area and a cathode emitting area, wherein a first PN (positive-negative) junction, a second PN junction and a third PN junction are arranged among the anode emitting area, the long base area, the short base area and the cathode emitting area; an anode boss is formed at one end of the anode emitting area; a cathode boss is formed at one end of the cathode emitting area; the top surface of the anode boss is divided into a first surface and a third surface which are symmetrical; the top surface of the cathode boss is divided into a second surface and a fourth surface which are symmetrically; the first surface and the third surface are of step shapes; a top step of the anode boss is formed at the joint of the first surface and the third surface; and the second surface and the fourth surface are of the step shapes, and a top step of the cathode boss is also formed at the joint of the second surface and the fourth surface. The thyristor-type diode chip has the advantages of simple manufacturing process, low manufacturing cost, small trigger current, rapid switching speed and the like.

Description

technical field [0001] The invention relates to a gate type diode chip, which belongs to the field of semiconductor devices. Background technique [0002] Bidirectional diode thyristor is a semiconductor device with PNPN four-layer two-terminal, which is often used in circuits such as high-pressure sodium vapor lamps, ignition systems, and pulse generators. Bidirectional diode thyristors in the prior art such as figure 1 and figure 2 As shown, it includes a long base region 1-1, a short base region 1-2, a cathode emitter region 1-3 and an anode emitter region 1-4, and its cathode emitter junction 1-6 is a curved surface junction, because of its bidirectional symmetry characteristics, in There are short-circuit points or short-circuit rings 1-5 on each side. The existence of short-circuit points or short-circuit rings 1-5 makes the diffusion and photolithography process of the device relatively complicated. After the device breaks down, there are small negative resistance ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/74H01L29/06
Inventor邓爱民保爱林
OwnerZHEJIANG MINGDE MICROELECTRONICS CO LTD