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Mesa-type reverse-blocking diode thyristor chip

A technology of reverse blocking and diode crystals, applied in the direction of thyristors, etc., can solve the problems of slow switching speed and large trigger current, and achieve the effect of small trigger current, small maintenance current and fast switching speed

Inactive Publication Date: 2015-05-13
ZHEJIANG MINGDE MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Bidirectional diode thyristor has a short circuit point on each side due to its bidirectional symmetry characteristics. If it is used in a circuit that only needs one-way triggering, the existence of the short circuit point makes the device have the disadvantages of slow switching speed and large trigger current.

Method used

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  • Mesa-type reverse-blocking diode thyristor chip
  • Mesa-type reverse-blocking diode thyristor chip
  • Mesa-type reverse-blocking diode thyristor chip

Examples

Experimental program
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Effect test

Embodiment 1

[0012] Embodiment 1: as Figure 4 As shown, the mesa reverse blocking diode thyristor chip includes P1 anode emitter region 5, N1 long base region 1, P2 short base region 4 and N2 cathode emitter region 7, and P1 is set on the side of N1 long base region 1 Anode emitter region 5, a first PN junction 2 is formed between N1 long base region 1 and P1 anode emitter region 5, P2 short base region 4 is provided on the other side of N1 long base region 1, N1 long base region 1 and P2 short The second PN junction 3 is formed between the base regions 4, and the N2 cathode emitter region 7 is also provided on the P2 short base region 4, and the third PN junction 6 is formed between the P2 short base region 4 and the N2 cathode emitter region 7, and the first The distance 12 between the PN junction 2 and the second PN junction 3 is 150 micrometers, the distance 11 between the second PN junction 3 and the third PN junction 6 is 10 micrometers, and a first protrusion is provided above the ...

Embodiment 2

[0013] Embodiment 2: the distance 12 between the first PN junction 2 and the second PN junction 3 is 170 microns, the distance 11 between the second PN junction 3 and the third PN junction 6 is 5 microns, and the rest are the same as in Embodiment 1.

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Abstract

The invention discloses a mesa-type reverse-blocking diode thyristor chip. The mesa-type reverse-blocking diode thyristor chip comprises a P1 anode emitter region, an N1 long base region, a P2 short base region, and an N2 cathode emitter region, wherein the P1 anode emitter region is arranged on one side of the N1 long base region, and a first PN junction is formed; the P2 short base region is arranged on the other side of the N1 long base region, and a second PN junction is formed; the N2 cathode emitter region is also arranged on the P2 short base region, and a third PN junction is formed; the distance between the first PN junction and the second PN junction is 100 to 180mum; and the distance between the second PN junction and the third PN junction is 3 to 20mum. The mesa-type reverse-blocking diode thyristor chip provided by the invention can realize on-off state transfer in the forward direction, and can realize blocking state in the reverse direction, has the advantages of small trigger current, high switching speed, small holding current and simple manufacture process, and can be used in a one-way high-voltage trigger circuit.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to a diode thyristor chip. Background technique [0002] Bidirectional diode thyristor is a kind of two-terminal semiconductor switching element that is ubiquitous in the market. It has a four-junction five-layer structure, which can realize switching state conversion in a very short time, and has symmetrical electrical characteristics in the first and third quadrants. , Commonly used in high-pressure sodium vapor lamps, ignition systems, pulse generators and other circuits. Bidirectional diode thyristors have short-circuit points on each side due to their bidirectional symmetrical characteristics. If they are used in a circuit that only requires one-way triggering, the existence of short-circuit points will cause the device to have shortcomings such as slow switching speed and large trigger current. Contents of the invention [0003] The purpose of the present invention is to prov...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/74
Inventor 邓爱民保爱林
Owner ZHEJIANG MINGDE MICROELECTRONICS CO LTD
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