A method of fabricating and layer-transferring semiconductor-relaxed, strained materials

Abstract

The invention provides a method for preparing semiconductor relaxation, tensile strain materials and for transferring layers thereof. The method includes the following steps: first, extending an growth middle thin layer, a Si epitaxial layer, and a top Si(1-x)Gex layer out a Si underlayer in sequence, wherein Ge component x is > 0 and <= 0.5, and the thickness of the Si(1-x)Gex layer is enabled to be no more than the critical thickness of the Si(1-x)Gex on the Si epitaxial layer, then infusing helium ions or hydrogen ions to samples and enabling peak values of the helium ions or the hydrogen ions to be distributed in the middle thin layer, and conducting annealing to relax the top Si(1-x)Gex layer, at last bonding the samples with a supporting underlayer, and conducting operations of pre-bonding, stripping and strengthening bonding, and at last removing residual middle thin layer and the Si epitaxial layer through selective corrosion, and thus layer-transferring of materials is achieved. Due to the fact that the ions infused in two times are distributed in the thin layer, co-infusing of the helium ions and the hydrogen ions is achieved, infusing dose of the stripping is effectively reduced, and thus purposes of enhancement in production efficiency and reduction in production cost are achieved.

Description

technical field [0001] The present invention relates to the application field of relaxed SiGe and strained Si involved in the patent, in particular to a method for preparing a relaxed and strained semiconductor material and transferring its layer. Background technique [0002] In recent years, as the size of semiconductor devices shrinks, traditional bulk silicon materials are approaching their physical limits. SiGe materials have attracted extensive attention due to their high mobility and can be used as virtual substrates for other materials. Strained SiGe and strained Si are known for their Compared with the many advantages of bulk Si, it has become a new material technology developed according to Moore's law. Due to the large lattice mismatch between SiGe and the substrate, the films obtained by heteroepitaxy often have a high dislocation density, which greatly limits the performance and reliability of the device. In order to better reduce and control the threading disl...

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