Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Channel simulator and modeling method thereof

A channel simulation and modeling method technology, applied in wireless communication, electrical components, etc., can solve the problems of complex theory, insufficient performance, and long design cycle of channel simulators

Active Publication Date: 2014-09-10
CHONGQING UNIV OF POSTS & TELECOMM
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a kind of channel simulator and modeling method thereof, aim at solving the channel simulator theory complexity such as existing general-purpose SCM, SCME, WINNERII and Kronecker model based on correlation matrix, design period is long or other performance is insufficient The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Channel simulator and modeling method thereof
  • Channel simulator and modeling method thereof
  • Channel simulator and modeling method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0066] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0067] A modeling method for a channel simulator, such as figure 1 and 2 shown, including the following steps:

[0068] S1. Use the SCM method to deal with large-scale fading and mesoscale fading, configure the parameters related to large-scale fading and mesoscale fading according to the selected specific scene, and convert them into corresponding weight constants;

[0069] In step S1, a specific environment is selected, and the parameters related to path loss and shadow fading of each environment are set as follows:

[0070] 1) Macro cell environment: shadow fading σ SF =8dB. The path loss a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a channel simulator and a modeling method thereof. An SCM (space channel molding) method is used for processing large-scale fading and medium-scale fading, and correlation parameters of the large-scale fading and medium-scale fading are configured according to the selected specific scene and converted into corresponding weight constant; a small-scale fading mathematical model is expanded in accordance with the Euler's formula, the frequency shift of each path of the expanded small-scale fading mathematical model is determined by combining a given maximum frequency shift and based on a random number generation scheme of the Box-Muller algorithm, and the sine and cosine functions of the expanded small-scale fading mathematical model are calculated through the PAR-CORDIC (Coordinate Rotational Digital Computer) algorithm; Gaussian white noise is generated based on the Box-Muller algorithm; Finally, the weight constant of the large-scale fading and medium-scale fading is used for weighting the small-scale fading mathematical model and then added to the Gaussian white noise to obtain a channel simulator model. According to the channel simulator and the modeling method thereof, the modeling is quick and efficient and has the performance advantages on resource consumption, processing time and the like.

Description

technical field [0001] The invention belongs to the technical field of mobile wireless communication, and in particular relates to a channel simulator and a modeling method thereof. Background technique [0002] For common channel models such as SCM (Spatial Channel Modeling), SCME (Extended Spatial Channel Modeling), WINNERII, IMT-Advanced, and Kronecker (Kronecker) models based on correlation matrices, it is necessary to consider spatial radio waves Various characteristics and factors such as antenna array, such as ray cluster performance, number of subpaths, median diameter performance, ray departure angle and arrival angle, ray angle spread at the transceiver end, distance and spatial correlation between antenna elements, antenna array at the transceiver end Gain and especially the parameter settings of various complex environments of WINNERII and the development model. Although the above-mentioned complex channel model can better simulate real channels, the complexity ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04W24/06
Inventor 王华华陈雷成陈发堂李小文王丹刘宇
Owner CHONGQING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com